The IXGQ85N33PCD1 is an IGBT with an anti-parallel diode designed for PDP sustain circuits. It is packaged in a TO-3P case with a mounting torque of 1.13 Nm and weighs 5.5 g. The device has a collector-emitter voltage rating of 330 V, a continuous collector current of 85 A, and a maximum power dissipation of 150 W at 25°C. The collector-emitter saturation voltage is 2.10 V at 50 A and 15 V gate-emitter voltage at 25°C. The junction temperature range is -55°C to 150°C. Thermal resistance from junction to case is 0.833 °C/W for the IGBT and 0.95 °C/W for the diode. The device meets international standard package requirements and features low on-state conduction losses and fast switching. It is qualified for operation in industrial and embedded applications requiring high power density and low gate drive requirements.
Trans IGBT Chip N-CH 330V 85A 150W 3-Pin(3+Tab) TO-3P Product overview: IXGQ85N33PCD1 from Littelfuse is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 330V, 85A, 150W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 330V, 85A, 150W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-IXGQ85N33PCD1 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-IXGQ85N33PCD1 |
| Product Name | 330V 85A 150W IGBT Transistor |
| PD | 150 milliwatts |
