Littelfuse, Inc. 100V - 1500V N-Channel Standard Power MOSFETs IXTA05N100

Description
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International standard packages Fast switching times Avalanche rated Rugged Polysilicon Gate Cell structure Ultra-low RDS(on)
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Description
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International standard packages Fast switching times Avalanche rated Rugged Polysilicon Gate Cell structure Ultra-low RDS(on)
Request a Quote
Datasheet
Datasheet Summary
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The IXTA05N100 is an N-channel enhancement mode MOSFET rated for 1000 V drain-source voltage and 750 mA continuous drain current at 25°C, designed for high-voltage switching applications such as switch-mode power supplies and dc choppers. It is packaged in a TO-263HV case, measuring 2.5 g in weight, with a maximum junction temperature of 150°C and a power dissipation of 40 W at 25°C case temperature. The on-state resistance is 17 Ω at 375 mA drain current and 10 V gate-source voltage. The device is avalanche rated, features fast switching times, and has a source-drain diode with a forward voltage of 1.5 V. Mounting torque for the TO-263HV package is 1.13 Nm (10 lb.in).

Datasheet Summary
Powered by GS/AI

The IXTA05N100 is an N-channel enhancement mode MOSFET rated for 1000 V drain-source voltage and 750 mA continuous drain current at 25°C, designed for high-voltage switching applications such as switch-mode power supplies and dc choppers. It is packaged in a TO-263HV case, measuring 2.5 g in weight, with a maximum junction temperature of 150°C and a power dissipation of 40 W at 25°C case temperature. The on-state resistance is 17 Ω at 375 mA drain current and 10 V gate-source voltage. The device is avalanche rated, features fast switching times, and has a source-drain diode with a forward voltage of 1.5 V. Mounting torque for the TO-263HV package is 1.13 Nm (10 lb.in).

Suppliers

Company
Product
Description
Supplier Links
100V - 1500V N-Channel Standard Power MOSFETs - IXTA05N100 - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1500V N-Channel Standard Power MOSFETs
IXTA05N100
100V - 1500V N-Channel Standard Power MOSFETs IXTA05N100
The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International standard packages Fast switching times Avalanche rated Rugged Polysilicon Gate Cell structure Ultra-low RDS(on)

The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International standard packages Fast switching times Avalanche rated Rugged Polysilicon Gate Cell structure Ultra-low RDS(on)

Supplier's Site Datasheet
Singapore, Singapore
MOSFET Transistor
278-IXTA05N100
MOSFET Transistor 278-IXTA05N100
Power Field-Effect Transistor, Product overview: IXTA05N100 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA05N100 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: IXTA05N100 from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA05N100 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA05N100 278-IXTA05N100
Product Name 100V - 1500V N-Channel Standard Power MOSFETs MOSFET Transistor
Polarity N-Channel
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