Littelfuse, Inc. 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFX80N50P

Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Description
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance
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Datasheet
Datasheet Summary
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The IXFX80N50P is an N-channel enhancement mode Power MOSFET designed for high-power switching applications, featuring a fast intrinsic diode and avalanche rating. It is housed in a PLUS247 package, measuring 4.83 to 5.21 mm in width and 20.80 to 21.34 mm in length, with a weight of 6 g. The device has a drain-source breakdown voltage of 500 V, continuous drain current of 80 A at 25°C, and a maximum on-resistance of 65 mΩ at VGS = 10 V and ID = 40 A. It supports unclamped inductive switching with an energy rating of 80 mJ and has a maximum junction temperature of 150°C. The MOSFET meets AEC-Q200 and RoHS standards, features low package inductance, and is designed for easy mounting and space savings.

Datasheet Summary
Powered by GS/AI

The IXFX80N50P is an N-channel enhancement mode Power MOSFET designed for high-power switching applications, featuring a fast intrinsic diode and avalanche rating. It is housed in a PLUS247 package, measuring 4.83 to 5.21 mm in width and 20.80 to 21.34 mm in length, with a weight of 6 g. The device has a drain-source breakdown voltage of 500 V, continuous drain current of 80 A at 25°C, and a maximum on-resistance of 65 mΩ at VGS = 10 V and ID = 40 A. It supports unclamped inductive switching with an energy rating of 80 mJ and has a maximum junction temperature of 150°C. The MOSFET meets AEC-Q200 and RoHS standards, features low package inductance, and is designed for easy mounting and space savings.

Suppliers

Company
Product
Description
Supplier Links
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFX80N50P - Littelfuse, Inc.
Rosemont, IL, United States
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFX80N50P
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFX80N50P
Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of HiPerFETs provides lowest RDS(on),low RthJC, low Qg, and enhanced DV/DT capability. Advantages: Easy to Mount Space Savings International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG and RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance

Supplier's Site Datasheet
Singapore, Singapore
N-Channel 80A 500V 0.065ohm MOSFET Transistor
278-IXFX80N50P
N-Channel 80A 500V 0.065ohm MOSFET Transistor 278-IXFX80N50P
Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN Product overview: IXFX80N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80A, 500V, 0.065ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80A, 500V, 0.065ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX80N50P can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN Product overview: IXFX80N50P from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 80A, 500V, 0.065ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80A, 500V, 0.065ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX80N50P can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. ERSAELECTRONICS PTE. LTD.
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFX80N50P 278-IXFX80N50P
Product Name 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) N-Channel 80A 500V 0.065ohm MOSFET Transistor
Polarity N-Channel
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