The IXTA02N250HV is an N-channel enhancement mode MOSFET designed for high-voltage switching applications such as power supplies, capacitor discharge, and pulse circuits. It features a maximum drain-source voltage of 2500 V, a continuous drain current of 200 mA, and a drain-source on-resistance of 450 Ω. The device is packaged in a TO-263AB (VHV) case with a drain tab, measuring 2.5 g in weight. It operates over a junction temperature range of -55 °C to 150 °C and has a thermal resistance of 1.5 °C/W. The MOSFET includes a fast intrinsic diode and complies with RoHS standards. Total gate charge is 7.4 nC, with a gate-source threshold voltage between 2.5 V and 4.5 V.
Trans MOSFET N-CH 2.5KV 0.2A 3-Pin(2+Tab) TO-263ABVHV T/R Product overview: IXTA02N250HV-TRL from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.5KV, 0.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 2.5KV, 0.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA02N250HV-TRL
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IXTA02N250HV-TRL |
| Product Name | 2.5KV 0.2A MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
| V(BR)DSS | 2500 volts |
| PD | 83000 milliwatts |
