The IXTA160N10T7 is a 100 V N-channel enhancement mode MOSFET designed for high-current switching applications such as automotive motor drives, 42 V power buses, and DC/DC converters. It is packaged in a TO-263 (7-lead) case with a weight of 3 g and supports a maximum junction temperature of 175 °C. The device has a maximum on-state resistance of 7.0 mΩ at 25 °C, a continuous drain current of 160 A, and an avalanche energy rating of 500 mJ. It is avalanche rated, features ultra-low on-resistance, low package inductance, and is compliant with AEC-Q200 automotive qualifications. The part supports unclamped inductive switching and has a drain-source diode with a forward voltage of 1.0 V at 25 A.
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density International Standard Packages Low RDS(ON) Avalanche rated High Current Handling Capability Fast Intrinsic Rectifier
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTA160N10T7 |
| Product Name | 55V - 300V Trench Gate Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
