The IXTA80N12T2 is an N-channel enhancement mode MOSFET rated for 120 V drain-to-source voltage and 80 A continuous drain current at 25°C, designed for high-current switching applications such as synchronous rectification and DC/DC converters. It is packaged in a TO-263AA (D2PAK) case, measuring 15.50 to 15.90 mm in length and 9.70 to 10.10 mm in width, with a weight of 2.5 g. The device has a maximum on-state resistance of 17 mΩ at 10 V gate voltage and 0.5 × 80 A drain current. It is avalanche rated with an energy rating of 400 mJ and operates up to a junction temperature of 175°C. The part includes a fast intrinsic rectifier and meets RoHS compliance. Thermal resistance from junction to case is 0.46 °C/W.
These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost High current capability (up to 600A) Low RDS(ON) and gate charge (Qg) Incorporates Littelfuse HiPerFETTM technology for fast power switching performance Avalanches capabilities
| Littelfuse, Inc. | |
|---|---|
| Product Category | Transistors |
| Product Number | IXTA80N12T2 |
| Product Name | 40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options |
| Polarity | N-Channel |
