The IXTA08N120P is an N-channel enhancement mode MOSFET rated for 1200 V drain-source voltage and 0.8 A continuous drain current, designed for high-voltage switching applications such as DC-DC converters, motor drives, and pulse power systems. It is packaged in a TO-263 (D2PAK) case measuring 10.67 mm × 9.65 mm with a 2.5 g weight, featuring a drain tab. The device has a maximum on-resistance of 25 Ω at 25°C, an avalanche energy rating of 80 mJ, and a thermal resistance of 2.5 °C/W junction-to-case. It is avalanche rated, has low package inductance, and meets RoHS standards. Operating junction temperature ranges from -55 °C to 150 °C. The part is suitable for high power density designs with easy mechanical mounting.
Trans MOSFET N-CH 1.2KV 0.8A 3-Pin(2+Tab) D2PAK T/R Product overview: IXTA08N120P-TRL from Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2KV, 0.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.2KV, 0.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTA08N120P-TRL can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IXTA08N120P-TRL |
| Product Name | 1.2KV 0.8A MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
| V(BR)DSS | 1200 volts |
| PD | 50000 milliwatts |
