Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
Transistors: Learn more
| Product Name | Notes |
|---|---|
| Designers who used this product also designed with BSS123N | Small signal/small power MOSFET BSZ086P03NS3 G | P-Channel Power MOSFET BSS123N | Small signal/small power MOSFET BSZ086P03NS3 G | P-Channel... | |
| HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Potential Applications For low noise, high-gain broadband amplifiers at collector... | |
| HiRel Microwave Transistor Summary of Features Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Type Variant No. 03 ESA Space Qualified ESSCC Detail Spec. | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package fT= 6,5 GHz... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA. Hermetically sealed microwave package fT= 8... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain low noise RF transistor High maximum stable gain: Gms 24dB at 1.8 GHz Noise figure F =... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor High gain ultra low noise RF transistor Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise... | |
| HiRel Microwave Transistor Summary of Features For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers Specified 1/f Noise Hermetically sealed microwave package fT= 8GHz F = 1.75... | |
| HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8... | |
| Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance... | |
| Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both... | |
| Infineon's 40V and 60V product families feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31%... | |
| New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31%... | |
| NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA Summary of Features For low noise, high-gain broadband amplifiers at collector... | |
| NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA Summary of Features For low noise, high-gain broadband amplifiers at collector... | |
| NPN Silicon RF Transistor Summary of Features For low distortion amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA Pb-free (RoHS compliant) package... | |
| NPN Silicon RF Transistor Summary of Features For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA Pb-free (RoHS compliant) package Potential Applications Wireless Communications... | |
| OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used... | |
| OptiMOS™ 5 100 V power MOSFETs in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 100 V power MOSFETs in SuperSO8 DSC (dual-side cooling) package offer... | |
| OptiMOS™ 5 100V power MOSFETs are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such... | |
| OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are... | |
| OptiMOS™ 5 low-voltage power MOSFET 30V With this OptiMOSTM 5 power MOSFET 30V, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in stand by... | |
| OptiMOS™ 5 power MOSFET 100 V in a SuperSO8 5x6 package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in... | |
| OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can... | |
| OptiMOS™ 5 power MOSFET with enhanced temperature rating for improved robustness OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This... | |
| OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer... | |
| OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC (dual-side cooling) package offer... | |
| OptiMOS™ 5 power MOSFETs in logic level provide low RDS(on) in a small package OptiMOS™ 5 power MOSFETs in logic level are highly suitable for charging, adapter and telecom... | |
| OptiMOS™ 6 40 V power MOSFETs combining best-in-class RDS(on) with superior switching performance The OptiMOS™ 6 power MOSFET 40 V family is optimized for a variety of applications and... | |
| OptiMOS™ 6 power MOSFETs 40 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 6 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer... | |
| OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these... | |
| OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Summary of... | |
| OptiMOS™ low-voltage power MOSFETs - perfectly addressing the needs of charger and adapter designs OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast... | |
| OptiMOS™ power MOSFETs in SuperSO8 package Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding... | |
| The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens... | |
| The 75V OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. Summary of Features... | |
| Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in... | |
| With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages, make OptiMOS™ | |
| With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge,... | |
| With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Summary of Features... |
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