BFY196(P) is a high-reliability NPN silicon RF transistor for non-flight applications, sharing the hermetically sealed Micro-X1 package and space-qualified performance of the BFY196(ES) series. It supports low-noise, high-gain amplification up to 2 GHz with a transition frequency of 6.5 GHz and a noise figure of 3 dB at 2 GHz. Maximum collector-emitter voltage is 12 V, with a collector current rating of 100 mA and total power dissipation of 700 mW at 105°C. Junction and operating temperatures range from -65°C to 200°C. Thermal resistance from junction to soldering point is 135 K/W. The device is ESD-sensitive and conforms to ESCC Detail Specification No. 5611/006, Type Variant No. 07.
HiRel Microwave Transistor
Summary of Features
Potential Applications
Quality level for Engineering Models
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BFY196 (P) |
| Product Name | HiRel Silicon Bipolar Transistor |
| Package Type | Micro-X |
