Infineon Technologies AG HiRel Silicon Bipolar Transistor BFY405 (P)

Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor -25 GHz fT-Line Type Variant No. 01 Potential Applications Quality level for Engineering Models Applications Space applications
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Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor -25 GHz fT-Line Type Variant No. 01 Potential Applications Quality level for Engineering Models Applications Space applications
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Datasheet
Datasheet Summary
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BFY405 is a hermetically sealed, high-reliability NPN silicon RF transistor designed for low-current applications and oscillators up to 12 GHz. It features a transition frequency of 20 GHz, a noise figure of 1.15 dB at 1.8 GHz, and a power gain of 23 dB at 1.8 GHz. The device is packaged in a Micro-X case with a 4-pin configuration. Maximum collector-emitter voltage is 4.5 V, collector current is 12 mA, and total power dissipation is 55 mW at a case temperature of 145 °C. Junction and operating temperatures range from -65 °C to 175 °C. The part is space qualified per ESCC Detail Specification 5611/008 and meets the requirements for flight use, with non-flight variants sharing identical electrical and mechanical characteristics.

Datasheet Summary
Powered by GS/AI

BFY405 is a hermetically sealed, high-reliability NPN silicon RF transistor designed for low-current applications and oscillators up to 12 GHz. It features a transition frequency of 20 GHz, a noise figure of 1.15 dB at 1.8 GHz, and a power gain of 23 dB at 1.8 GHz. The device is packaged in a Micro-X case with a 4-pin configuration. Maximum collector-emitter voltage is 4.5 V, collector current is 12 mA, and total power dissipation is 55 mW at a case temperature of 145 °C. Junction and operating temperatures range from -65 °C to 175 °C. The part is space qualified per ESCC Detail Specification 5611/008 and meets the requirements for flight use, with non-flight variants sharing identical electrical and mechanical characteristics.

Suppliers

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HiRel Silicon Bipolar Transistor - BFY405 (P) - Infineon Technologies AG
Neubiberg, Germany
HiRel Silicon Bipolar Transistor
BFY405 (P)
HiRel Silicon Bipolar Transistor BFY405 (P)
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor -25 GHz fT-Line Type Variant No. 01 Potential Applications Quality level for Engineering Models Applications Space applications

HiRel Microwave Transistor


Summary of Features

  • HiRel Discrete and Microwave Semiconductor
  • For Low Current Applications
  • For Oscillators up to 12 GHz
  • Noise Figure F = 1.15 dB at 1.8 GHz
  • Outstanding Gms = 23dB at 1.8 GHz
  • Hermetically sealed microwave package
  • Transition Frequency fT = 20 GHz
  • SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor -25 GHz fT-Line
  • Type Variant No. 01

Potential Applications

Quality level for Engineering Models


Applications

  • Space applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY405 (P)
Product Name HiRel Silicon Bipolar Transistor
Package Type Micro-X
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