Infineon Technologies AG N-Channel Power MOSFET BSC026N08NS5

Description
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment DIN rail power supplies Medium voltage (MV) drive Telecommunication infrastructure Designers who used this product also designed with ICE2QR2280G | CoolSET™ Quasi Resonant BSC098N10NS5 | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs BSC093N15NS5 | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC070N10NS5 | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET IPZA60R037CM8 | 600 V CoolMOS™ 8 BSC004NE2LS5 | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs BSC040N10NS5 | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC360N15NS3 G | N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 BSC190N15NS3 G | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC098N10NS5 | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs BSC093N15NS5 | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC070N10NS5 | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs 1 2 3 4 5
Request a Quote Datasheet
Description
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment DIN rail power supplies Medium voltage (MV) drive Telecommunication infrastructure Designers who used this product also designed with ICE2QR2280G | CoolSET™ Quasi Resonant BSC098N10NS5 | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs BSC093N15NS5 | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC070N10NS5 | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET IPZA60R037CM8 | 600 V CoolMOS™ 8 BSC004NE2LS5 | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs BSC040N10NS5 | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC360N15NS3 G | N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 BSC190N15NS3 G | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC098N10NS5 | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs BSC093N15NS5 | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC070N10NS5 | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC026N08NS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC026N08NS5
N-Channel Power MOSFET BSC026N08NS5
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment DIN rail power supplies Medium voltage (MV) drive Telecommunication infrastructure Designers who used this product also designed with ICE2QR2280G | CoolSET™ Quasi Resonant BSC098N10NS5 | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs BSC093N15NS5 | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC070N10NS5 | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET BSC035N10NS5 | N-Channel Power MOSFET IPZA60R037CM8 | 600 V CoolMOS™ 8 BSC004NE2LS5 | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs BSC040N10NS5 | N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC360N15NS3 G | N-Channel Power MOSFET IPT60R028G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R037CM8 | 600 V CoolMOS™ 8 BSC190N15NS3 G | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC098N10NS5 | N-Channel Power MOSFET 1EDI60N12AF | Gate driver ICs 2ED2110S06M | Gate driver ICs BSC093N15NS5 | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC070N10NS5 | N-Channel Power MOSFET 2EDN7524G | Gate driver ICs 1 2 3 4 5

OptiMOS™ 5 power MOSFET 80V for telecom applications

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.


Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44 %
  • RDS(on) reduction of up to 43 % from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Adapter

Applications

  • 48 V intermediate bus converter (IBC)
  • Cordless power tools and outdoor power equipment
  • DIN rail power supplies
  • Medium voltage (MV) drive
  • Telecommunication infrastructure

Designers who used this product also designed with


  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • BSC098N10NS5 |
    N-Channel Power MOSFET
  • 1EDI60N12AF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • 2EDN7524R |
    Gate driver ICs
  • BSC070N10NS5 |
    N-Channel Power MOSFET
  • 2EDN7524G |
    Gate driver ICs
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSZ900N20NS3 G |
    N-Channel Power MOSFET
  • BSC035N10NS5 |
    N-Channel Power MOSFET
  • IPZA60R037CM8 |
    600 V CoolMOS™ 8
  • BSC004NE2LS5 |
    N-Channel Power MOSFET
  • 1EDI20N12AF |
    Gate driver ICs
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • 1EDN7511B |
    Gate driver ICs
  • BSC360N15NS3 G |
    N-Channel Power MOSFET
  • IPT60R028G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R037CM8 |
    600 V CoolMOS™ 8
  • BSC190N15NS3 G |
    N-Channel Power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • BSC098N10NS5 |
    N-Channel Power MOSFET
  • 1EDI60N12AF |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • 2EDN7524R |
    Gate driver ICs
  • BSC070N10NS5 |
    N-Channel Power MOSFET
  • 2EDN7524G |
    Gate driver ICs

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Supplier's Site Datasheet
Singapore, Singapore
80V 23A MOSFET Transistor
278-BSC026N08NS5
80V 23A MOSFET Transistor 278-BSC026N08NS5
Trans MOSFET N-CH 80V 23A 8-Pin TDSON EP T/R Product overview: BSC026N08NS5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC026N08NS5 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 80V 23A 8-Pin TDSON EP T/R Product overview: BSC026N08NS5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC026N08NS5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD.
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC026N08NS5 278-BSC026N08NS5
Product Name N-Channel Power MOSFET 80V 23A MOSFET Transistor
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0026 ohms
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type PG-TDSON-8 Tape and Reel
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