Infineon Technologies AG MOSFET BSC050N03MS G

BSC050N03MS G is an N-channel power MOSFET optimized for 5V driver applications in notebook, VGA, and point-of-load circuits. It is packaged in a PG-TDSON-8 case with a maximum continuous drain current of 80 A at T_C = 25 °C and V_GS = 10 V. The drain-source on-resistance is 5.0 mΩ at V_GS = 4.5 V and 4.2 mΩ at V_GS = 10 V, both at 30 A. The device has a drain-source breakdown voltage of 30 V, a gate-source voltage rating of ±20 V, and is qualified to JEDEC standards. It features a thermal resistance junction-to-case of 2.5 K/W from the bottom, an avalanche energy rating of 35 mJ at 40 A, and is RoHS compliant and halogen-free according to IEC 61249-2-21.