Infineon Technologies AG N-Channel Power MOSFET BSC040N08NS5

Description
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications 48 V intermediate bus converter (IBC) Data center and AI data center solutions Edge computing EV charging Telecommunication infrastructure Designers who used this product also designed with IRS4427S | Gate driver ICs 2EDL8033G4B | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC110N15NS5 | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages 2EDN7524R | Gate driver ICs IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes BSZ900N15NS3 G | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET IRS10752L | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN7550B | Gate driver ICs IRS21271S | Gate driver ICs IRS4427S | Gate driver ICs 2EDL8033G4B | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC110N15NS5 | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages 2EDN7524R | Gate driver ICs IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4
Request a Quote Datasheet
Description
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications 48 V intermediate bus converter (IBC) Data center and AI data center solutions Edge computing EV charging Telecommunication infrastructure Designers who used this product also designed with IRS4427S | Gate driver ICs 2EDL8033G4B | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC110N15NS5 | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages 2EDN7524R | Gate driver ICs IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes BSZ900N15NS3 G | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET IRS10752L | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN7550B | Gate driver ICs IRS21271S | Gate driver ICs IRS4427S | Gate driver ICs 2EDL8033G4B | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC110N15NS5 | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages 2EDN7524R | Gate driver ICs IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC040N08NS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC040N08NS5
N-Channel Power MOSFET BSC040N08NS5
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications 48 V intermediate bus converter (IBC) Data center and AI data center solutions Edge computing EV charging Telecommunication infrastructure Designers who used this product also designed with IRS4427S | Gate driver ICs 2EDL8033G4B | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC110N15NS5 | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages 2EDN7524R | Gate driver ICs IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDH08G65C5 | CoolSiC™ Schottky Diodes BSZ900N15NS3 G | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET IRS10752L | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDN7550B | Gate driver ICs IRS21271S | Gate driver ICs IRS4427S | Gate driver ICs 2EDL8033G4B | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC110N15NS5 | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages 2EDN7524R | Gate driver ICs IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4

OptiMOS™ 5 power MOSFET 80V for telecom applications

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.


Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44 %
  • RDS(on) reduction of up to 43 % from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Adapter

Applications

  • 48 V intermediate bus converter (IBC)
  • Data center and AI data center solutions
  • Edge computing
  • EV charging
  • Telecommunication infrastructure

Designers who used this product also designed with


  • IRS4427S |
    Gate driver ICs
  • 2EDL8033G4B |
    Gate driver ICs
  • 2EDN7534B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • BSC110N15NS5 |
    N-Channel Power MOSFET
  • TDA21462 |
    Integrated Smart Power Stages
  • 2EDN7524R |
    Gate driver ICs
  • IPD80R1K4P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDH08G65C5 |
    CoolSiC™ Schottky Diodes
  • BSZ900N15NS3 G |
    N-Channel Power MOSFET
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • BSS138N |
    Small signal/small power MOSFET
  • IRS10752L |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDN7550B |
    Gate driver ICs
  • IRS21271S |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2EDL8033G4B |
    Gate driver ICs
  • 2EDN7534B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • BSC110N15NS5 |
    N-Channel Power MOSFET
  • TDA21462 |
    Integrated Smart Power Stages
  • 2EDN7524R |
    Gate driver ICs
  • IPD80R1K4P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet
Singapore, Singapore
80V 100A MOSFET Transistor
278-BSC040N08NS5
80V 100A MOSFET Transistor 278-BSC040N08NS5
Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R Product overview: BSC040N08NS5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC040N08NS5 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R Product overview: BSC040N08NS5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC040N08NS5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC040N08NS5 - 1154677-BSC040N08NS5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC040N08NS5
1154677-BSC040N08NS5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC040N08NS5 1154677-BSC040N08NS5
Manufacturer: Infineon Technologies Win Source Part Number: 1154677-BSC040N08NS5 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1154677-BSC040N08NS5
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now
Transistors - BSC040N08NS5 - ODG (Origin Data Global)
Shenzhen, China
Transistors
BSC040N08NS5
Transistors BSC040N08NS5
TDSON-8-EP(5x6) MOSFETs ROHS

TDSON-8-EP(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global)
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors
Product Number BSC040N08NS5 278-BSC040N08NS5 1154677-BSC040N08NS5 BSC040N08NS5
Product Name N-Channel Power MOSFET 80V 100A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC040N08NS5 Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0040 ohms
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type PG-TDSON-8 Tape and Reel SOT3
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