Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050NE2LS BSC050NE2LS

Description
Manufacturer: Infineon Technologies Win Source Part Number: 005109-BSC050NE2LS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Family Name: BSC050NE2LS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 39A (Ta), 58A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 10.4nC @ 10V Max Input Capacitance: 760pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): MCP87050T-U/MF; RJK0210DPA-00-J5A; CSD58887Q3; Introduction Date: February 24, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 005109-BSC050NE2LS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Family Name: BSC050NE2LS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 39A (Ta), 58A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 10.4nC @ 10V Max Input Capacitance: 760pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): MCP87050T-U/MF; RJK0210DPA-00-J5A; CSD58887Q3; Introduction Date: February 24, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050NE2LS - 005109-BSC050NE2LS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050NE2LS
005109-BSC050NE2LS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050NE2LS 005109-BSC050NE2LS
Manufacturer: Infineon Technologies Win Source Part Number: 005109-BSC050NE2LS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Family Name: BSC050NE2LS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 39A (Ta), 58A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 10.4nC @ 10V Max Input Capacitance: 760pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): MCP87050T-U/MF; RJK0210DPA-00-J5A; CSD58887Q3; Introduction Date: February 24, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 005109-BSC050NE2LS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Family Name: BSC050NE2LS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 39A (Ta), 58A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 10.4nC @ 10V
Max Input Capacitance: 760pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): MCP87050T-U/MF; RJK0210DPA-00-J5A; CSD58887Q3;
Introduction Date: February 24, 2010
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
BSC050NE2LS
Triode/MOS Tube/Transistor >> MOSFETs BSC050NE2LS
25V 58A 28W 5mΩ@10V,30A 2V@250uA N Channel TDSON-8-EP(5x6) MOSFETs ROHS

25V 58A 28W 5mΩ@10V,30A 2V@250uA N Channel TDSON-8-EP(5x6) MOSFETs ROHS

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 25V 58A TDSON-8 OptiMOS

MOSFET N-Ch 25V 58A TDSON-8 OptiMOS

Buy Now Datasheet

Technical Specifications

  Win Source Electronics LCSC Electronics Technology (HK) Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 005109-BSC050NE2LS BSC050NE2LS BSC050NE2LS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050NE2LS Triode/MOS Tube/Transistor >> MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 25 volts 25 volts
PD 2500 to 28000 milliwatts 28000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data