Infineon Technologies AG N-Channel Power MOSFET BSC035N10NS5

Description
OptiMOS™ 5 power MOSFET 100 V in a SuperSO8 5x6 package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Light electric vehicles (LEV) Mobile devices and smartphones Telecommunication infrastructure Designers who used this product also designed with IRS10752L | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs 1ED44173N01B | Gate driver ICs BSC010N04LSI | N-Channel Power MOSFET BSC037N08NS5 | N-Channel Power MOSFET IR38063M | Integrated POL Voltage Regulators BSZ068N06NS | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET 2EDS7165H | Gate driver ICs BSC030N08NS5 | N-Channel Power MOSFET IPT60R102G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS131 | Small signal/small power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDL10G65C5 | CoolSiC™ Schottky Diodes 2ED2110S06M | Gate driver ICs 2EDL8033G4B | Gate driver ICs IRS10752L | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs 1ED44173N01B | Gate driver ICs BSC010N04LSI | N-Channel Power MOSFET BSC037N08NS5 | N-Channel Power MOSFET IR38063M | Integrated POL Voltage Regulators BSZ068N06NS | N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet
Description
OptiMOS™ 5 power MOSFET 100 V in a SuperSO8 5x6 package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Light electric vehicles (LEV) Mobile devices and smartphones Telecommunication infrastructure Designers who used this product also designed with IRS10752L | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs 1ED44173N01B | Gate driver ICs BSC010N04LSI | N-Channel Power MOSFET BSC037N08NS5 | N-Channel Power MOSFET IR38063M | Integrated POL Voltage Regulators BSZ068N06NS | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET 2EDS7165H | Gate driver ICs BSC030N08NS5 | N-Channel Power MOSFET IPT60R102G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS131 | Small signal/small power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDL10G65C5 | CoolSiC™ Schottky Diodes 2ED2110S06M | Gate driver ICs 2EDL8033G4B | Gate driver ICs IRS10752L | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs 1ED44173N01B | Gate driver ICs BSC010N04LSI | N-Channel Power MOSFET BSC037N08NS5 | N-Channel Power MOSFET IR38063M | Integrated POL Voltage Regulators BSZ068N06NS | N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC035N10NS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC035N10NS5
N-Channel Power MOSFET BSC035N10NS5
OptiMOS™ 5 power MOSFET 100 V in a SuperSO8 5x6 package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Light electric vehicles (LEV) Mobile devices and smartphones Telecommunication infrastructure Designers who used this product also designed with IRS10752L | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs 1ED44173N01B | Gate driver ICs BSC010N04LSI | N-Channel Power MOSFET BSC037N08NS5 | N-Channel Power MOSFET IR38063M | Integrated POL Voltage Regulators BSZ068N06NS | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET 2EDS7165H | Gate driver ICs BSC030N08NS5 | N-Channel Power MOSFET IPT60R102G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSS131 | Small signal/small power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPL60R065C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDL10G65C5 | CoolSiC™ Schottky Diodes 2ED2110S06M | Gate driver ICs 2EDL8033G4B | Gate driver ICs IRS10752L | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs 1ED44173N01B | Gate driver ICs BSC010N04LSI | N-Channel Power MOSFET BSC037N08NS5 | N-Channel Power MOSFET IR38063M | Integrated POL Voltage Regulators BSZ068N06NS | N-Channel Power MOSFET 1 2 3 4 5

OptiMOS™ 5 power MOSFET 100 V in a SuperSO8 5x6 package

Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.


Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44%
  • RDS(on) reduction of up to 43% from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Light electric vehicles
  • Adapter

Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44%
  • RDS(on) reduction of up to 43% from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Light electric vehicles
  • Adapter

Applications

  • 48 V intermediate bus converter (IBC)
  • DIN rail power supplies
  • Light electric vehicles (LEV)
  • Mobile devices and smartphones
  • Telecommunication infrastructure

Designers who used this product also designed with


  • IRS10752L |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • IRS21271S |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • BSC010N04LSI |
    N-Channel Power MOSFET
  • BSC037N08NS5 |
    N-Channel Power MOSFET
  • IR38063M |
    Integrated POL Voltage Regulators
  • BSZ068N06NS |
    N-Channel Power MOSFET
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • BSZ075N08NS5 |
    N-Channel Power MOSFET
  • 2EDS7165H |
    Gate driver ICs
  • BSC030N08NS5 |
    N-Channel Power MOSFET
  • IPT60R102G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSS131 |
    Small signal/small power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • IPL60R065C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDL10G65C5 |
    CoolSiC™ Schottky Diodes
  • 2ED2110S06M |
    Gate driver ICs
  • 2EDL8033G4B |
    Gate driver ICs
  • IRS10752L |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • IRS21271S |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • BSC010N04LSI |
    N-Channel Power MOSFET
  • BSC037N08NS5 |
    N-Channel Power MOSFET
  • IR38063M |
    Integrated POL Voltage Regulators
  • BSZ068N06NS |
    N-Channel Power MOSFET

1
2
3
4
5

Supplier's Site Datasheet
Singapore
100V 100A MOSFET Transistor
278-BSC035N10NS5
100V 100A MOSFET Transistor 278-BSC035N10NS5
Trans MOSFET N-CH 100V 100A 8-Pin TDSON EP T/R Product overview: BSC035N10NS5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC035N10NS5 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 100V 100A 8-Pin TDSON EP T/R Product overview: BSC035N10NS5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC035N10NS5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC035N10NS5 - 1154675-BSC035N10NS5 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC035N10NS5
1154675-BSC035N10NS5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC035N10NS5 1154675-BSC035N10NS5
Manufacturer: Infineon Technologies Win Source Part Number: 1154675-BSC035N10NS5 Family Name: BSC035N10NS5 Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): FDMT800100DC; BSC035N10NS5ATMA1; Introduction Date: December 17, 2014 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1154675-BSC035N10NS5
Family Name: BSC035N10NS5
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): FDMT800100DC; BSC035N10NS5ATMA1;
Introduction Date: December 17, 2014
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Buy Now

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number BSC035N10NS5 278-BSC035N10NS5 1154675-BSC035N10NS5
Product Name N-Channel Power MOSFET 100V 100A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC035N10NS5
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0035 ohms
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type PG-TDSON-8 Tape and Reel SOT3
Unlock Full Specs
to access all available technical data