MOSFET N-CH 40V 100A TDSON-8-6 Product overview: BSC022N04LSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC022N04LSATMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 1024322-BSC022N04LSA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 2600pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.2 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
N-Channel 40V 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
N-Channel 40V 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
N-Channel 40V 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-6
MOSFET, N-CH, 40V, 100A, 150DEG C, 69W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 40V 100A TDSON-8-6
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
MOSFET N-CH 40V 100A TDSON-8-6
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-BSC022N04LSATMA1 | 1024322-BSC022N04LSATMA1 | BSC022N04LSATMA1DKR-ND | 13AC8326 | BSC022N04LSATMA1 | BSC022N04LSATMA1 | BSC022N04LSATMA1 |
| Product Name | 40V 100A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC022N04LSATMA1 | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 100A, 150Deg C, 69W; Channel Type Infineon | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | ||||
| Transconductance | 0.0900 kS | ||||||
| PD | 69 milliwatts | 2500 to 69000 milliwatts | 2500 milliwatts |
