Manufacturer: Infineon Technologies
Win Source Part Number: 1024328-BSC034N03LSG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 22A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 52nC @ 10V
Max Input Capacitance: 4300pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.4 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
N-Channel 30V 22A (Ta), 100A (Tc) 2.5W (Ta), 57W (Tc) Surface Mount PG-TDSON-8-5
MOSFET N-CH 30V 22A/100A TDSON
MOSFET N-CH 30V 22A/100A TDSON
Infineon MOSFET BSC034N03LSGATMA1
MOSFET N-CH 30V 22A/100A TDSON Product overview: BSC034N03LSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 22A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 22A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC034N03LSGATMA
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
MOSFET, N-CH, 30V, 100A, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes
MOSFET N-CH 30V 22A/100A TDSON
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1024328-BSC034N03LSGATMA1 | 448-BSC034N03LSGATMA1TR-ND | 2152459 | 2152459P | 278-BSC034N03LSGATMA1 | BSC034N03LSGATMA1 | 97Y1248 | BSC034N03LSGATMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC034N03LSGATMA1 | Single FETs, MOSFETs | MOSFETs | MOSFETs | 30V 22A 100A MOSFET Transistor | MOSFET | Mosfet, N-Ch, 30V, 100A, Pg-Tdson-8; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| PD | 2500 to 57000 milliwatts | 57 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; PG-TDSON-8 | 8-PowerTDFN | Superso8 5x6 | SuperSO | Tape & Reel (TR) | TO-3 | PG-TDSON-8-5 |
