Infineon Technologies AG RF Bipolar Transistors BFS 17P E6327

Description
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Description
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Datasheet
Datasheet Summary
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BFS17P is an NPN silicon RF transistor for broadband amplifiers, mixers, and oscillators up to 1 GHz. It is packaged in SOT23 with a maximum collector-emitter voltage of 15 V, collector current of 25 mA, and total power dissipation of 280 mW. The transition frequency is 1.4 GHz, noise figure is 3.5 dB, and third-order output intercept point is 21.5 dBm. The device is RoHS compliant and ESD sensitive.

Datasheet Summary
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BFS17P is an NPN silicon RF transistor for broadband amplifiers, mixers, and oscillators up to 1 GHz. It is packaged in SOT23 with a maximum collector-emitter voltage of 15 V, collector current of 25 mA, and total power dissipation of 280 mW. The transition frequency is 1.4 GHz, noise figure is 3.5 dB, and third-order output intercept point is 21.5 dBm. The device is RoHS compliant and ESD sensitive.

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Sheung Wan, Hong Kong
RF Bipolar Transistors
BFS 17P E6327
RF Bipolar Transistors BFS 17P E6327
RF Bipolar Transistors NPN Silicon RF TRANSISTOR

RF Bipolar Transistors NPN Silicon RF TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BFS 17P E6327
Product Name RF Bipolar Transistors
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