BSC030N08NS5 is an N-channel MOSFET designed for high-performance synchronous rectification in SMPS applications. It is packaged in a PG-TDSON-8 case. The device has a drain-source breakdown voltage of 80 V, a maximum on-state resistance of 3.0 mΩ at V_GS = 10 V and I_D = 50 A, a continuous drain current rating of 100 A at T_C = 100 °C, and a peak pulsed drain current of 644 A. It supports 250 mJ of single-pulse avalanche energy. The total gate charge is 61 to 76 nC, and the output charge is 73 to 97 nC. It is RoHS compliant and meets IEC 61249-2-21 halogen-free standards, with an operating temperature range of -55 °C to 150 °C.
OptiMOS™ 5 power MOSFET 80V for telecom applications
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
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Manufacturer: Infineon Technologies
Win Source Part Number: 201382-BSC030N08NS5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 3.8V @ 95μA
Max Gate Charge: 76nC @ 10V
Max Input Capacitance: 5600pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): FDMS86350; BSC026N08NS5ATMA1; BSC030N08NS5ATMA1;
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET N-CH 80V 100A 8TDSON Product overview: BSC030N08NS5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 100A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSC030N08NS5 can be used for catalog matching and distributor lookup.
80V 100A 3mΩ@10V,50A 2.5W 3.8V@95uA N Channel TDSON-8-EP(5x6) MOSFETs ROHS
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC030N08NS5 | 201382-BSC030N08NS5 | 285-BSC030N08NS5 | BSC030N08NS5 |
| Product Name | N-Channel Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC030N08NS5 | 80V 100A MOSFET Transistor | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N | N-Channel; N-Channel | N-Channel | N-Channel |
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.0030 ohms | 0.0030 ohms | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |
| Package Type | PG-TDSON-8 | SOT3; PG-TDSON-8 | Reel - TR |
