MOSFET N-CH 40V 32/100A SUPERSO8 Product overview: BSC014N04LSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC014N04LSATMA1
N-Channel 40V 32A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount SuperSO8
N-Channel 40V 32A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount SuperSO8
N-Channel 40V 32A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount SuperSO8
Win Source Part Number: 1112260-BSC014N04LSA
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: SuperSO8
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSC014N04LS;
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000871196,BSC014N0
Base Product Number: BSC014
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
MOSFET N-CH 40V 32/100A SUPERSO8
MOSFET, N-CH, 40V, 100A, 150DEG C, 96W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSC014N04LSATMA1 | BSC014N04LSATMA1TR-ND | 1112260-BSC014N04LSATMA1 | BSC014N04LSATMA1 | BSC014N04LSATMA1 | 31Y0555 |
| Product Name | 40V 100A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 40V, 100A, 150Deg C, 96W; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 40 volts | |||||
| Transconductance | 0.1200 kS | |||||
| PD | 96 milliwatts | 2500 to 96000 milliwatts |
