Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC028N06LS3G BSC028N06LS3G

Manufacturer: Infineon Technologies
Win Source Part Number: 089637-BSC028N06LS3G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Family Name: BSC028N06LS3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 23A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 93μA
Max Gate Charge: 175nC @ 10V
Max Input Capacitance: 13000pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.8 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): DMT6004LPS-13; DMTH6004SPS-13; DMTH6004SPSQ-13;
Introduction Date: December 06, 2000
ECCN: EAR99
Country of Origin: Austria, Malaysia
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 60V 100A TDSON-8 Product overview: BSC028N06LS3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSC028N06LS3G can be used for catalog matching and distributor lookup.