Infineon Technologies AG RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY650B-12(ES) BFY650B-12(ES)

BFY650B-12(ES) is a high-reliability NPN silicon RF transistor for space applications, housed in a hermetically sealed Micro-X package. It features a maximum collector-emitter voltage of 4 V at temperatures above 0 °C and 3.7 V at or below 0 °C, a collector current rating of 150 mA, and a total power dissipation of 600 mW at 76 °C. The device has a junction temperature limit of 175 °C and an operating temperature range from -65 °C to 175 °C. At 1.8 GHz, it delivers a maximum available gain of 18 dB and a noise figure of 0.8 dB with 80 mA collector current and 3 V collector-emitter voltage. It is space qualified per ESCC Detail Specification No. 5611/010 and meets ESD handling requirements.