Infineon Technologies AG RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY650B-12(ES) BFY650B-12(ES)

Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Hermetically sealed microwave package Applications Space applications
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Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Hermetically sealed microwave package Applications Space applications
Request a Quote Datasheet

Suppliers

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Supplier Links
RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY650B-12(ES) - BFY650B-12(ES) - Infineon Technologies AG
Neubiberg, Germany
RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY650B-12(ES)
BFY650B-12(ES)
RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY650B-12(ES) BFY650B-12(ES)
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Hermetically sealed microwave package Applications Space applications

HiRel Microwave Transistor

Summary of Features

  • HiRel Discrete and Microwave Semiconductor
  • For high power amplifiers
  • Ideal for low phase noise oscilators
  • Maximum available gain: Gma = 19 dB at 1.8 GHz
  • Noise figure F = 0.9 dB at 1.8 GHz
  • Hermetically sealed microwave package

Applications

  • Space applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY650B-12(ES)
Product Name RF - High Reliability Discrete - HiRel Silicon Bipolar Transistor - BFY650B-12(ES)
Packing Method WAFER UNSAWN
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