Infineon Technologies AG MOSFETs BSC010NE2LS

Description
MOSFET N-Channel 25V 39A OptiMOS TSDSON8
Request a Quote Datasheet
Description
MOSFET N-Channel 25V 39A OptiMOS TSDSON8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
MOSFETs - 9064270P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9064270P
MOSFETs 9064270P
MOSFET N-Channel 25V 39A OptiMOS TSDSON8

MOSFET N-Channel 25V 39A OptiMOS TSDSON8

Supplier's Site
MOSFETs - 9064270 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9064270
MOSFETs 9064270
MOSFET N-Channel 25V 39A OptiMOS TSDSON8

MOSFET N-Channel 25V 39A OptiMOS TSDSON8

Supplier's Site
MOSFETs - 1787480 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1787480
MOSFETs 1787480
MOSFET N-Channel 25V 39A OptiMOS TSDSON8

MOSFET N-Channel 25V 39A OptiMOS TSDSON8

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC010NE2LS - 089394-BSC010NE2LS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC010NE2LS
089394-BSC010NE2LS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC010NE2LS 089394-BSC010NE2LS
Manufacturer: Infineon Technologies Win Source Part Number: 089394-BSC010NE2LS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Family Name: BSC010NE2LS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 39A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 4700pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): FDMS8558S; FDMS7570S; SiR476DP-T1-GE3; CSD16415Q5T; Introduction Date: February 24, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 089394-BSC010NE2LS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Family Name: BSC010NE2LS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 39A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 4700pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): FDMS8558S; FDMS7570S; SiR476DP-T1-GE3; CSD16415Q5T;
Introduction Date: February 24, 2010
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS

MOSFET N-Ch 25V 100A TDSON-8 OptiMOS

Buy Now Datasheet

Technical Specifications

  RS Components, Ltd. RS Components, Ltd. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 9064270P 9064270 089394-BSC010NE2LS BSC010NE2LS
Product Name MOSFETs MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC010NE2LS MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TDSON Tdson SOT3; PG-TDSON-8
MOSFET Operating Mode Enhancement
Number of units in IC 1
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