Infineon Technologies AG MOSFETs BSC010NE2LS

MOSFET N-Channel 25V 39A OptiMOS TSDSON8

MOSFET N-Channel 25V 39A OptiMOS TSDSON8

MOSFET N-Channel 25V 39A OptiMOS TSDSON8

Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R Product overview: BSC010NE2LS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 39A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 39A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC010NE2LS can be used for catalog matching and distributor lookup.

Manufacturer: Infineon Technologies
Win Source Part Number: 089394-BSC010NE2LS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Family Name: BSC010NE2LS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 39A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 4700pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): FDMS8558S; FDMS7570S; SiR476DP-T1-GE3; CSD16415Q5T;
Introduction Date: February 24, 2010
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited