BFY193C(ES) is a hermetically sealed, space-qualified NPN silicon RF transistor designed for low-noise, high-gain amplifiers up to 2 GHz. It operates with a collector-emitter voltage up to 12 V and a maximum collector current of 80 mA, dissipating up to 580 mW at 104 °C. The device features a transition frequency of 8 GHz, a noise figure of 2.3 dB at 2 GHz, and a DC current gain ranging from 50 to 175. The Micro-X1 package has four pins configured as collector, emitter, base, and emitter. Junction and storage temperatures range from -65 °C to 200 °C. It meets ESCC Detail Spec. No. 5611/006 and is qualified for flight use.
HiRel Microwave Transistor
Summary of Features
ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/006/08 B
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BFY193C (ES) |
| Product Name | HiRel Silicon Bipolar Transistor |
| Package Type | Micro-X |
