Infineon Technologies AG Single FETs, MOSFETs BSC050N03MSGATMA1

Description
N-Channel 30V 16A (Ta), 80A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5
Request a Quote Datasheet
Description
N-Channel 30V 16A (Ta), 80A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5
Request a Quote Datasheet

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Single FETs, MOSFETs - BSC050N03MSGATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC050N03MSGATMA1TR-ND
Single FETs, MOSFETs BSC050N03MSGATMA1TR-ND
N-Channel 30V 16A (Ta), 80A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5

N-Channel 30V 16A (Ta), 80A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050N03MSGATMA1 - 099053-BSC050N03MSGATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050N03MSGATMA1
099053-BSC050N03MSGATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050N03MSGATMA1 099053-BSC050N03MSGATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 099053-BSC050N03MSGA TMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 16A (Ta), 80A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 3600pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): AOL1424; BSC050N03LSGXT; BSC050N03MS G; Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Sufficient Quantity per package: 5k pcs

Manufacturer: Infineon Technologies
Win Source Part Number: 099053-BSC050N03MSGATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 16A (Ta), 80A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 3600pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): AOL1424; BSC050N03LSGXT; BSC050N03MS G;
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSC050N03MSGATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSC050N03MSGATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC050N03MSGATMA1
MOSFET N-CH 30V 16A/80A TDSON

MOSFET N-CH 30V 16A/80A TDSON

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSC050N03MSGATMA1TR-ND 099053-BSC050N03MSGATMA1 BSC050N03MSGATMA1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050N03MSGATMA1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type 8-PowerTDFN SOT3; PG-TDSON-8 8-PowerTDFN
V(BR)DSS 30 volts
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