N-channel MOSFET in a TDSON-8 package with a drain-source voltage rating of 75 V, a continuous drain current of 100 A at 25 °C, and a maximum on-state resistance of 4.2 mΩ at 10 V gate-source voltage. The device meets the AEC Q101 standard and is qualified for automotive applications. Thermal resistance from junction to case is 0.9 K/W. Package dimensions are 5.0 mm × 6.0 mm × 1.0 mm.
MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC042NE7NS3 G |
| Product Name | MOSFET |
