BFY196(ES) is a hermetically sealed, space-qualified NPN silicon RF transistor designed for low-noise, high-gain amplification up to 2 GHz. It is packaged in a Micro-X1 case with four pins configured as collector, emitter, base, and emitter. The device has a transition frequency of 6.5 GHz, a noise figure of 3 dB at 2 GHz, and a power gain of 10 to 11 dB under specified conditions. Maximum collector-emitter voltage is 12 V, collector current is 100 mA, and total power dissipation is 700 mW at temperatures up to 105 °C. Junction and storage temperatures range from -65 °C to 200 °C. The thermal resistance from junction to soldering point is 135 K/W. It meets ESCC Detail Specification No. 5611/006 and is qualified for space applications.
HiRel Microwave Transistor
Summary of Features
ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/006/07 B
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BFY196 (ES) |
| Product Name | HiRel Silicon Bipolar Transistor |
| Package Type | Micro-X |
