Infineon Technologies AG Bipolar RF Transistors BFS 483 E6327

BFS483 is a dual NPN silicon bipolar RF transistor in a SOT363 surface-mount package, designed for low-noise, high-gain broadband amplification at collector currents from 2 mA to 30 mA. It has a maximum collector-emitter voltage of 12 V, a collector current rating of 65 mA, and a total power dissipation of 450 mW. The transition frequency is specified from 6 GHz to 8 GHz, with a minimum noise figure of 0.9 dB at 900 MHz and 1.4 dB at 1.8 GHz. The device features two internally isolated transistors in a single package, and is RoHS compliant and halogen-free. Qualification according to AEC-Q101 is available.