MOSFET N-CH 30V 21A/100A TDSON
N-Channel 30V 21A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1
N-Channel 30V 21A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1
N-Channel 30V 21A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1
MOSFET N-CH 30V 21A/100A TDSON Product overview: BSC030N03MSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC030N03MSGATMA
Manufacturer: Infineon Technologies
Win Source Part Number: 097185-BSC030N03MSGA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 21A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 73nC @ 10V
Max Input Capacitance: 5700pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
Quantity per package: 5k pcs
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
MOSFET N-CH 30V 21A/100A TDSON
MOSFET, N-CH, 30V, 100A, PG-TDSON- 8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC030N03MSGATMA1 | BSC030N03MSGATMA1DKR-ND | 278-BSC030N03MSGATMA1 | 097185-BSC030N03MSGATMA1 | BSC030N03MSGATMA1 | BSC030N03MSGATMA1 | 79X1330 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 30V 21A 100A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC030N03MSGATMA1 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 100A, Pg-Tdson8; Channel Type Infineon |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 21000 milliamps | 100000 milliamps | |||||
| PD | 2500 milliwatts | 69 milliwatts | 2500 to 69000 milliwatts |
