Infineon Technologies AG Bipolar Transistor BGB540E6327

Description
TRANSISTOR RF ACT BIAS SOT-343 Product overview: BGB540E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BGB540E6327 can be used for catalog matching and distributor lookup.
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Description
TRANSISTOR RF ACT BIAS SOT-343 Product overview: BGB540E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BGB540E6327 can be used for catalog matching and distributor lookup.
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Bipolar Transistor 283-BGB540E6327
TRANSISTOR RF ACT BIAS SOT-343 Product overview: BGB540E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BGB540E6327 can be used for catalog matching and distributor lookup.

TRANSISTOR RF ACT BIAS SOT-343 Product overview: BGB540E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BGB540E6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BGB540E6327 - 201206-BGB540E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BGB540E6327
201206-BGB540E6327
TRANSISTORS - RF Transistors (BJT) - BGB540E6327 201206-BGB540E6327
Manufacturer: Infineon Technologies Win Source Part Number: 201206-BGB540E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 16dB to 17.5dB Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.3dB to 2dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 3.5V Maximum Power Dissipation: 120mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 201206-BGB540E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 16dB to 17.5dB
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.3dB to 2dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 3.5V
Maximum Power Dissipation: 120mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors RF Transistors
Product Number 283-BGB540E6327 201206-BGB540E6327
Product Name Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - BGB540E6327
Polarity NPN NPN; NPN
Package Type Reel - TR SOT3; PG-SOT343-4
Packing Method Reel - TR Tape Reel; Reel - TR
Noise Figure 1.3 dB 1.3 dB
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