Manufacturer: Infineon Technologies
Win Source Part Number: 201194-BG3130R E6327
Packaging: Reel - TR
Voltage Rating: 8V
Current Rating: 25mA
Frequency: 800MHz
Current - Test: 14mA
Gain: 24dB
Transistor Polarity: 2 N-Channel (Dual)
Voltage - Test: 5V
Noise Figure: 1.3dB
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: PG-SOT363-6
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH DUAL 8V SOT-363 Product overview: BG3130R E6327 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 8V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 8V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BG3130R E6327 can be used for catalog matching and distributor lookup.
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 201194-BG3130R E6327 | 285-BG3130R E6327 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BG3130R E6327 | Dual 8V MOSFET Transistor |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel |