Infineon Technologies AG Bipolar RF Transistors BGB 540 E6327

BGB540 is an active biased RF transistor in a SOT343 package designed for high-gain, low-noise amplifier applications in wireless communications, including cellular phones and SAT-TV. It features a maximum collector-emitter voltage of 4.5 V, maximum collector current of 80 mA, and total power dissipation of 250 mW at ambient temperatures below 75°C. The device provides 18 dB power gain at 1.8 GHz with a noise figure as low as 1.15 dB at 0.9 GHz. It operates on supply voltages from 1.4 to 4.3 V and has an open-collector output with bias current controllable via an external resistor. The junction temperature rating is 150°C, and the package conforms to DIN 6784. The part meets AEC-Q200 qualification and RoHS standards. Thermal resistance from junction to solder point is 300 K/W.