Infineon Technologies AG HiRel Silicon Bipolar Transistor BFY405 (ES)

Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line Type Variant No. 01 ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/008/01 B Applications Space applications
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Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line Type Variant No. 01 ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/008/01 B Applications Space applications
Request a Quote Datasheet

Suppliers

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Product
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HiRel Silicon Bipolar Transistor - BFY405 (ES) - Infineon Technologies AG
Neubiberg, Germany
HiRel Silicon Bipolar Transistor
BFY405 (ES)
HiRel Silicon Bipolar Transistor BFY405 (ES)
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line Type Variant No. 01 ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/008/01 B Applications Space applications

HiRel Microwave Transistor


Summary of Features

  • HiRel Discrete and Microwave Semiconductor
  • For Low Current Applications
  • For Oscillators up to 12 GHz
  • Noise Figure F = 1.15 dB at 1.8 GHz
  • Outstanding Gms = 23dB at 1.8 GHz
  • Hermetically sealed microwave package
  • Transition Frequency fT = 20 GHz
  • SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line
  • Type Variant No. 01

ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/008/01 B


Applications

  • Space applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY405 (ES)
Product Name HiRel Silicon Bipolar Transistor
Package Type Micro-X
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