Infineon Technologies AG HiRel Silicon Bipolar Transistor BFY450 (ES)

Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line Type Variant No. 03 ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/008/01 B Applications Space applications
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Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line Type Variant No. 03 ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/008/01 B Applications Space applications
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Datasheet
Datasheet Summary
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BFY450(ES) is a hermetically sealed NPN silicon RF transistor for medium power amplifiers in space applications. It features a Micro-X package with four pins configured as collector, emitter, base, and emitter. The device has a transition frequency of 20 GHz, a 1 dB compression point of 19 dBm at 1.8 GHz, and a maximum available gain of 16 dB at 1.8 GHz. Maximum collector-emitter voltage is 4.5 V, collector current is 100 mA, and total power dissipation is 450 mW at a case temperature of 110 °C. The junction and operating temperature ranges extend from -65 °C to 175 °C. The transistor meets ESCC Detail Specification No. 5611/008 and is space qualified. ESD sensitivity requires appropriate handling precautions.

Datasheet Summary
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BFY450(ES) is a hermetically sealed NPN silicon RF transistor for medium power amplifiers in space applications. It features a Micro-X package with four pins configured as collector, emitter, base, and emitter. The device has a transition frequency of 20 GHz, a 1 dB compression point of 19 dBm at 1.8 GHz, and a maximum available gain of 16 dB at 1.8 GHz. Maximum collector-emitter voltage is 4.5 V, collector current is 100 mA, and total power dissipation is 450 mW at a case temperature of 110 °C. The junction and operating temperature ranges extend from -65 °C to 175 °C. The transistor meets ESCC Detail Specification No. 5611/008 and is space qualified. ESD sensitivity requires appropriate handling precautions.

Suppliers

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HiRel Silicon Bipolar Transistor - BFY450 (ES) - Infineon Technologies AG
Neubiberg, Germany
HiRel Silicon Bipolar Transistor
BFY450 (ES)
HiRel Silicon Bipolar Transistor BFY450 (ES)
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For Medium Power Amplifiers Compression Point P-1dB =19dBm 1.8 GHz Max. Available Gain Gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line Type Variant No. 03 ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/008/01 B Applications Space applications

HiRel Microwave Transistor


Summary of Features

  • HiRel Discrete and Microwave Semiconductor
  • For Medium Power Amplifiers
  • Compression Point P-1dB =19dBm 1.8 GHz
  • Max. Available Gain Gma = 16dB at 1.8 GHz
  • Hermetically sealed microwave package
  • Transition Frequency fT = 20 GHz
  • SIEGET® 25-Line Infineon Technologies Grounded Emitter Transistor-25 GHz fT-Line
  • Type Variant No. 03

ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/008/01 B


Applications

  • Space applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY450 (ES)
Product Name HiRel Silicon Bipolar Transistor
Package Type Micro-X
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