MOSFET N-CH 40V 31A/100A TDSON Product overview: BSC016N04LSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 31A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 31A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC016N04LSGATMA
Win Source Part Number: 960506-BSC016N04LSGA
Category: Discrete Semiconductor Products>Transistors
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2V @ 85µA
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TDSON-8-1
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSB014N04LX3GXUMA1; BSC030N04NSGATMA1; BSC019N04NSGATMA1; FDMS8460; FDMS8672S; SIS434DN-T1-GE3BSC01
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: BSC016N04LSGATMA1TR,
Base Product Number: BSC016
Product Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 40V 31A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1
MOSFET N-CH 40V 31A/100A TDSON
MOSFET, N-CH, 40V, 100A, PG-TDSON- 8; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET N-CH 40V 31A/100A TDSON
MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSC016N04LSGATMA1 | 960506-BSC016N04LSGATMA1 | BSC016N04LSGATMA1TR-ND | BSC016N04LSGATMA1 | 79X1326 | BSC016N04LSGATMA1 | BSC016N04LSGATMA1 |
| Product Name | 40V 31A 100A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 100A, Pg-Tdson8; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| Transconductance | 0.0950 kS | ||||||
| PD | 139 milliwatts | 2500 to 139000 milliwatts | 2500 milliwatts |
