Infineon Technologies AG N-Channel Power MOSFET BSC009NE2LS

With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of battery management, or-ing, e-fuse and Hot-swap application. Super-SO8 package has a standard footprint that allows thinner and smaller application solutions compared to the IPB009N03LS.

Summary of Features

• Lowest on-state resistance
• High DC and pulsed current capability
• Easy to design-in

Benefits

• Increased battery lifetime/system efficiency
• Saving space (reducing the number of devices needed)
• Saving costs

Potential Applications

• Or-ing in power supply
• Hot-swap
• e-fuse
• Battery management

Applications

• 48 V intermediate bus converter (IBC)
• Cordless vacuum cleaners
• Data center and AI data center solutions
• Uninterruptible power supplies (UPS)
• Washing and drying

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MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS Product overview: BSC009NE2LS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC009NE2LS can be used for catalog matching and distributor lookup.

MOSFET N-Channel 25V 41A OptiMOS TSDSON8

MOSFET N-Channel 25V 41A OptiMOS TSDSON8

MOSFET N-Channel 25V 41A OptiMOS TSDSON8

MOSFET N-Ch 25V 100A TDSON-8 OptiMOS

Manufacturer: Infineon Technologies
Win Source Part Number: 012119-BSC009NE2LS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 41A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 57nC @ 10V
Max Input Capacitance: 3900pF @ 12V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 0.9 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited