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With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of battery management, or-ing, e-fuse and Hot-swap application. Super-SO8 package has a standard footprint that allows thinner and smaller application solutions compared to the IPB009N03LS.
Summary of Features
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OptiMOSâ„¢ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on)
Channel Type = N
Maximum Continuous Drain Current = 100 A
Maximum Drain Source Voltage = 25 V
Maximum Drain Source Resistance = 900 μOhms
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TSDSON
Mounting Type = Surface Mount
Transistor Configuration = Single
Pin Count = 8
Channel Mode = Enhancement
OptiMOSâ„¢ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on)
Channel Type = N
Maximum Continuous Drain Current = 100 A
Maximum Drain Source Voltage = 25 V
Maximum Drain Source Resistance = 900 μOhms
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TSDSON
Mounting Type = Surface Mount
Transistor Configuration = Single
Pin Count = 8
Channel Mode = Enhancement
Delivery on production packaging - Reel. This product is non-returnable.
MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
Manufacturer: Infineon Technologies
Win Source Part Number: 012119-BSC009NE2LS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 74W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 41A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 57nC @ 10V
Max Input Capacitance: 3900pF @ 12V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 0.9 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
| Infineon Technologies AG | RS Components, Ltd. | VAST STOCK CO., LIMITED | Win Source Electronics | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC009NE2LS | 9064441 | BSC009NE2LS | 012119-BSC009NE2LS |
| Product Name | N-Channel Power MOSFET | MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC009NE2LS | |
| Polarity | N-Channel; N | N-Channel | N-Channel; N-Channel | |
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 9.00E-4 ohms | 9.00E-4 ohms | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
