BSC019N06NS is a 60 V N-channel MOSFET optimized for synchronous rectification, housed in a PG-TDSON-8 FL package. It features a maximum drain-source on-state resistance of 1.95 mΩ at 10 V gate voltage and 50 A drain current, with a continuous drain current rating of 136 A at 100 °C ambient temperature. The device supports a maximum junction temperature of 175 °C and is 100% avalanche-tested with single-pulse energy capability of 220 mJ. It meets RoHS and IEC61249-2-21 non-halogenated standards. Thermal resistance from junction to case (bottom) is specified between 0.7 and 1.1 K/W.
OptiMOS™ 5 power MOSFET with enhanced temperature rating for improved robustness
OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.
Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | BSC019N06NS |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0019 ohms |
