Infineon Technologies AG HiRel Silicon Bipolar Transistor BFY650B-11 (ES)

Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Hermetically sealed microwave package ESA Space Qualified ESCC Detail Spec. No.: 5611/010 Applications Space applications
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Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Hermetically sealed microwave package ESA Space Qualified ESCC Detail Spec. No.: 5611/010 Applications Space applications
Request a Quote Datasheet

Suppliers

Company
Product
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HiRel Silicon Bipolar Transistor - BFY650B-11 (ES) - Infineon Technologies AG
Neubiberg, Germany
HiRel Silicon Bipolar Transistor
BFY650B-11 (ES)
HiRel Silicon Bipolar Transistor BFY650B-11 (ES)
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For high power amplifiers Ideal for low phase noise oscilators Maximum available gain: Gma = 19 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Hermetically sealed microwave package ESA Space Qualified ESCC Detail Spec. No.: 5611/010 Applications Space applications

HiRel Microwave Transistor


Summary of Features

  • HiRel Discrete and Microwave Semiconductor
  • For high power amplifiers
  • Ideal for low phase noise oscilators
  • Maximum available gain: Gma = 19 dB at 1.8 GHz
  • Noise figure F = 0.9 dB at 1.8 GHz
  • Hermetically sealed microwave package

ESA Space Qualified ESCC Detail Spec. No.: 5611/010


Applications

  • Space applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY650B-11 (ES)
Product Name HiRel Silicon Bipolar Transistor
Package Type Micro-X
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