Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC009N04LSSC BSC009N04LSSC

Description
OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus, either the PCB runs cooler at the same power dissipation for improved reliability, or more power can be handled by the MOSFET for higher power density. Summary of Features High performance silicon technology Low top-side RthJC (0.86 K/W) Package rated to TJmax=175ºC Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products Benefits Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change Potential Applications Power and gardening tools Service robots and automated guided vehicles (AGVs) Telecom power supplies Server power supplies
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC009N04LSSC - BSC009N04LSSC - Infineon Technologies AG
    Infineon Technologies AG
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Description
OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus, either the PCB runs cooler at the same power dissipation for improved reliability, or more power can be handled by the MOSFET for higher power density. Summary of Features High performance silicon technology Low top-side RthJC (0.86 K/W) Package rated to TJmax=175ºC Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products Benefits Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change Potential Applications Power and gardening tools Service robots and automated guided vehicles (AGVs) Telecom power supplies Server power supplies
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Datasheet
Datasheet Summary
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The BSC009N04LSSC is an N-channel logic-level MOSFET rated for 40 V, designed for synchronous rectification with dual-side cooled PG-VSON-8 or PG-WSON-8 packages. It has a maximum on-resistance of 0.94 mΩ, a continuous drain current of 301 A at 25 °C with V_GS=10 V, and a peak pulsed drain current of 1204 A. The package is rated to 175 °C junction temperature, with a thermal resistance from junction to case top of 0.86 K/W and bottom of 0.9 K/W. The device is 100% avalanche tested with a single-pulse avalanche energy of 330 mJ and meets JEDEC qualification standards.

Datasheet Summary
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The BSC009N04LSSC is an N-channel logic-level MOSFET rated for 40 V, designed for synchronous rectification with dual-side cooled PG-VSON-8 or PG-WSON-8 packages. It has a maximum on-resistance of 0.94 mΩ, a continuous drain current of 301 A at 25 °C with V_GS=10 V, and a peak pulsed drain current of 1204 A. The package is rated to 175 °C junction temperature, with a thermal resistance from junction to case top of 0.86 K/W and bottom of 0.9 K/W. The device is 100% avalanche tested with a single-pulse avalanche energy of 330 mJ and meets JEDEC qualification standards.

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC009N04LSSC - BSC009N04LSSC - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC009N04LSSC
BSC009N04LSSC
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC009N04LSSC BSC009N04LSSC
OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus, either the PCB runs cooler at the same power dissipation for improved reliability, or more power can be handled by the MOSFET for higher power density. Summary of Features High performance silicon technology Low top-side RthJC (0.86 K/W) Package rated to TJmax=175ºC Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products Benefits Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change Potential Applications Power and gardening tools Service robots and automated guided vehicles (AGVs) Telecom power supplies Server power supplies

OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint.

SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink).

About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus,

  • either the PCB runs cooler at the same power dissipation for improved reliability,
  • or more power can be handled by the MOSFET for higher power density.

Summary of Features

  • High performance silicon technology
  • Low top-side RthJC (0.86 K/W)
  • Package rated to TJmax=175ºC
  • Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products

Benefits

  • Lower conduction losses and switching losses for higher system efficiency
  • Improved heat dissipation for high power density and improved reliability
  • Superior power handling capability and ruggedness for longer lifetime
  • Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change

Potential Applications

  • Power and gardening tools
  • Service robots and automated guided vehicles (AGVs)
  • Telecom power supplies
  • Server power supplies
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC009N04LSSC
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC009N04LSSC
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 9.40E-4 ohms
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