BFY183(P) is a HiRel NPN silicon RF transistor for non-flight applications, sharing the same fit, form, and function as the BFY183(ES) variant. It is designed for low noise, high-gain broadband amplifiers with collector currents from 2 mA to 30 mA, featuring a hermetically sealed Micro-X1 package. The device has a transition frequency of 8 GHz and a noise figure of 2.3 dB at 2 GHz. Maximum collector-emitter voltage is 12 V, with a maximum collector current of 65 mA and total power dissipation of 450 mW at a case temperature of 99 °C. Operating and storage temperatures range from -65 °C to 200 °C. Electrostatic discharge sensitivity requires appropriate handling precautions.
HiRel Microwave Transistor
Summary of Features
Potential Applications
Quality level for Engineering Models
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BFY183 (P) |
| Product Name | HiRel Silicon Bipolar Transistor |
| Package Type | Micro-X |
