Infineon Technologies AG Datasheets for Transistors
Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.
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| Product Name | Notes |
|---|---|
| 62 mm 1200 V , 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM). | |
| 62 mm 1200 V, 200 A dual IGBT module with trench/fieldstop IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material. Summary of Features Superior solution for frequency controlled inverter... | |
| 62 mm 1200 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available with Thermal Interface Material. Summary of Features Superior solution for frequency controlled... | |
| 62 mm 1200 V, 300 A dual IGBT module with TRENCHSTOP™ IGBT4 and optimized emitter controlled diode. Also available with Thermal Interface Material. Summary of Features Superior solution for frequency... | |
| 62 mm 1200 V, 300 A dual IGBT module with TRENCHSTOP™ IGBT4, optimized emitter controlled diode and pre-applied Thermal Interface Material Summary of Features Superior solution for frequency controlled inverter... | |
| 62 mm 1200 V, 450 A common emitter IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode. Summary of Features Highest power density Best-in-class VCEsat Tvj op =... | |
| 62 mm 1200 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4 and Emitter Controlled Diode. Also available with Thermal Interface Material. Summary of Features Superior solution for frequency controlled... | |
| 62 mm 1200 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material. Summary of Features Superior solution for frequency controlled inverter... | |
| 62 mm 1200 V, 450 A dual low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode. Summary of Features Highest power density Best-in-class VCEsat... | |
| 62 mm 1200 V, 5.5 mΩ half-bridge module with CoolSiC™ MOSFET technology in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material... | |
| 62 mm 1200 V, 600 A common emitter low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode. Summary of Features Highest power density Best-in-class V... | |
| 62 mm 1200 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4, emitter controlled diode and pre-applied Thermal Interface Material. Summary of Features Tvj op = 150°C RoHS compliant... | |
| 62 mm 1200 V, 600 A dual low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode. Summary of Features Highest power density Best-in-class VCEsat... | |
| 62 mm 1200 V, 600 A dual low sat& fast trench IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available as variation with common emitter:FF600R12KE4_ E. Summary of... | |
| 62 mm 1200 V, 800 A common emitter low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode. Summary of Features Highest power density Best-in-class V... | |
| 62 mm 1200 V, 800 A dual low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled 7 diode. Summary of Features Highest power density Best-in-class V... | |
| 62 mm 1700 V, 400 A half-bridge IGBT module with fast TRENCHSTOP™ IGBT4 and emitter controlled diode. Summary of Features 400A / 1700V T vj op = 150°C RoHS compliant... | |
| 62 mm 650 V, 300 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Summary of Features Increased blocking voltage capability to 650V Extended Operation Temperature Tvj... | |
| 62 mm 650 V, 400 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Summary of Features Increased blocking voltage capability to 650 V Extended operation temperature T... | |
| 62 mm C-series 1200 V, 300 A 3-level IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200... | |
| 62 mm C-series 1200 V, 450 A IGBT module with emitter controlled HE diode and fast TRENCHSTOP™ IGBT4. Summary of Features Tvj op = 150°C 4 kV AC 1min... | |
| 62 mm C-series 1200 V, 600 A IGBT module with emitter controlled HE diode and fast TRENCHSTOP™ IGBT4. Summary of Features Tvj op = 150°C RoHS compliant 4 kV... | |
| 62 mm C-series 1700 V, 400 A common emitter IGBT module is the right choice for your design. This IGBT module is equipped with a fast TRENCHSTOP™ IGBT4 and Emitter... | |
| 62 mm CoolSiC™ MOSFET common source module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Summary of Features High current density Low switching... | |
| 62 mm CoolSiC™ MOSFET common source module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology. Summary of Features High current density Low... | |
| 62 mm CoolSiC™ MOSFET half bridge module 1200 V, 1.6 mΩ G1 in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material... | |
| 62 mm CoolSiC™ MOSFET half bridge module 1200 V, 2.1 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary... | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing combined with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary... | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 2.6 mΩ G1 in the well known 62mm housing with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM). | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology and pre-applied Thermal Interface Material (TIM). Summary... | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 3.5 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material... | |
| 62 mm CoolSiC™ MOSFET half bridge module 2000 V, 5.2 mΩ G1 in the well known 62mm housing design with M1H chip technology. Also available with pre-applied Thermal Interface Material... | |
| 62mm C-series 1200 V, 450 A dual IGBT module with fast TRENCHSTOP™ IGBT4 and optimized Emitter Controlled diode. Also available with pre-applied Thermal Interface Material. Summary of Features Superior solution... | |
| 62mm C-series 1200 V, 450 A dual IGBT module with trench/fieldstop IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material. Summary of Features Superior solution for frequency controlled inverter... | |
| EasyDUAL™ 1B CoolSiC™ MOSFET half-bridge module 1200 V, 55 mΩ with PressFit contact technology and AlN Ceramic. Summary of Features Wide RBSOA Very low stray inductance Enlarged gate drive voltage... | |
| EasyDUAL™ 1B, 1200 V, 75 A common emitter IGBT module with TRENCHSTOP™ IGBT T7, EC7, PressFIT pin and NTC. Summary of Features Easy family with 12mm height Very low stray... | |
| EasyDUAL™ 2B CoolSiC™ MOSFET half-bridge module 2000 V, 6 mΩ with NTC temperature sensor, PressFIT Contact Technology and aluminium nitride ceramic Summary of Features Best in Class packages with 12mm... | |
| EasyDUAL™ 2B, 1200 V, 150 A common emitter IGBT module with TRENCHSTOP™ IGBT T7, EC7, Pressfit Pin, and NTC. Summary of Features Easy family with 12mm height Very low stray... | |
| EasyDUAL™ 2B, 1200 V, 200 A common emitter IGBT module with TRENCHSTOP™ IGBT T7, EC7, Pressfit Pin, and NTC. Summary of Features Easy family with 12mm height Very low stray... | |
| EasyDUAL™ 2B, 1200 V, 300 A common emitter IGBT module with TRENCHSTOP™ IGBT T7, EC7, Pressfit Pin, and NTC. Summary of Features Easy family with 12mm height Very low stray... | |
| EasyPACK™ 2B 750V, 300A half bridge automotive qualified IGBT module The FF300R08W2P2_B11A is a very compact and flexible product for inverter applications of hybrid and electric vehicles. This 750 V,... | |
| EasyPACK™ 3B CoolSiC™ MOSFET 2000 V half-bridge module, integrated NTC temperature sensor and High Current Pin. Summary of Features Easy family with 12mm height Gate-source voltages of +23 V and... | |
| EconoDUAL™ 3 1200 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and pre-applied Thermal Interface Material. Summary of Features Low VCEsat Tvj op... | |
| EconoDUAL™ 3 1200 V, 225 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled HE Diode and NTC. Also available with Thermal Interface Material and as variation with PressFIT mounting... | |
| EconoDUAL™ 3 1200 V, 225 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled HE Diode, NTC and pre-applied Thermal Interface Material. Summary of Features Low VCEsat Tvj... | |
| EconoDUAL™ 3 1200 V, 225 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled HE Diode, NTC and PressFIT Contact Technology. Also available as variation with Soldering connection technology: FF225R12ME4. | |
| EconoDUAL™ 3 1200 V, 300 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled HE Diode, NTC and PressFIT contact technology. Also available with Thermal Interface Material. Summary of Features... | |
| EconoDUAL™ 3 1200 V, 300 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled HE Diode, NTC, PressFIT contact technology and pre-applied Thermal Interface Material. Summary of Features Low V... | |
| EconoDUAL™ 3 1200 V, 300 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features Highest power density Tvj op = 175°C... | |
| EconoDUAL™ 3 1200 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled HE Diode, NTC and PressFIT Contact Technology. Also available with Thermal Interface Material. Summary of Features... | |
| EconoDUAL™ 3 1200 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled HE Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material. Summary of Features Low V... | |
| EconoDUAL™ 3 1200 V, 450 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode and NTC. Also available as variant with PressFIT contact technology: FF450R12ME7_B11. Summary of Features Highest... | |
| EconoDUAL™ 3 1200 V, 450 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features Highest power density Tvj op = 175°C... | |
| EconoDUAL™ 3 1200 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode and NTC. Also available with pre-applied Thermal Interface Material, emitter controlled soft diode. Summary of... | |
| EconoDUAL™ 3 1200 V, 600 A dual TRENCHSTOP™ IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled soft diode performance, NTC and PressFIT Contact Technology. Summary of Features Low VCEsat T... | |
| EconoDUAL™ 3 1200 V, 600 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode and NTC. Also available as variant with PressFIT contact technology: FF600R12ME7_B11. Summary of Features Highest... | |
| EconoDUAL™ 3 1200 V, 600 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features Highest power density Tvj op = 175°C... | |
| EconoDUAL™ 3 1200 V, 750 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features Highest power density Tvj op = 175°C... | |
| EconoDUAL™ 3 1700 V, 225 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features Low VCE,sat Tvj op =... | |
| EconoDUAL™ 3 1700 V, 225 A half-bridge dual IGBT module with low sat and fast TRENCHSTOP™ IGBT4 and Emitter Controlled 3 diode. Also available as variation with PressFIT mounting or... | |
| EconoDUAL™ 3 1700 V, 300 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology. Also available with pre-applied Thermal Interface Material or as variation... | |
| EconoDUAL™ 3 1700 V, 300 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features High power density Low VCEsat with... | |
| EconoDUAL™ 3 1700 V, 300 A half-bridge dual IGBT module with low sat and fast TRENCHSTOP™ IGBT4 and Emitter Controlled 3 diode. Also available as variation with PressFIT mounting technology:... | |
| EconoDUAL™ 3 1700 V, 450 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features High power density Low VCEsat with... | |
| EconoDUAL™ 3 1700 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode and NTC. Also available with Thermal Interface Material. Also available as variation with PressFIT mounting... | |
| EconoDUAL™ 3 1700 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology. Also available with pre-applied Thermal Interface Material or as variation... | |
| EconoDUAL™ 3 1700 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled HE Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material. Summary of Features Low V... | |
| EconoDUAL™ 3 1700 V, 600 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features High power density Low VCEsat with... | |
| EconoDUAL™ 3 1700 V, 750 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features High power density Low VCEsat with... | |
| EconoDUAL™ 3 1700 V, 750 A dual TRENCHSTOP™ IGBT7 module with enlarged emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features Low VCE,sat Enlarged diode Reduced... | |
| EconoDUAL™ 3 1700 V, 750 A dual TRENCHSTOP™ IGBT7 module with enlarged emitter controlled 7 diode, NTC, PressFIT contact technology and pre-applied Thermal Interface Material. Summary of Features Low V... | |
| EconoDUAL™ 3 1700 V. 300 A dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material. Summary of Features Low VCEsat... | |
| EconoDUAL™ 3 650 V, 300 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode and NTC. Also available with PressFIT Contact Technology. Summary of Features Increased blocking voltage capability... | |
| EconoDUAL™ 3 650 V, 300 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology. Summary of Features Increased blocking voltage capability to 650V Increased... | |
| EconoDUAL™ 3 650 V, 450 A dual IGBT module with TRENCHSTOP IGBT4, Emitter Controlled diode and NTC. Also available with PressFIT contact technology. Summary of Features Increased blocking voltage capability... | |
| EconoDUAL™ 3 650 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled diode, NTC and PressFIT Contact Technology. Summary of Features Increased blocking voltage capability to 650V Increased... | |
| EconoDUAL™ 3 650 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode and NTC. Also available with PressFIT contact technology. Summary of Features Increased blocking voltage capability... | |
| EconoDUAL™ 3 650 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology. Summary of Features Increased blocking voltage capability to 650V Increased... | |
| EconoDUAL™ 3 CoolSiC™ MOSFET half-bridge module 1200 V, 1.4 mΩ with enhanced generation 1, integrated NTC temperature sensor, PressFIT Contact Technology and wave structure on the back side of the... | |
| EconoDUAL™ 3 CoolSiC™ MOSFET half-bridge module 1200 V, 1.4 mΩ with enhanced generation 1, integrated NTC temperature sensor, PressFIT contact technology, and pre-applied Thermal Interface Material. Also available with wave... | |
| EconoDUAL™3 1200 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled soft diode performance and NTC. Also available as variation with PressFIT mounting technology: FF600R12ME4C_B11. Summary of Features... | |
| EconoDUAL™3 1700 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4 and Emitter Controlled 3 diode and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features Easy separation... | |
| EconoDUAL™3 1700 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and pre-applied Thermal Interface Material. Summary of Features Easy separation of DC and AC Optimized... | |
| EconoDUAL™3 1700 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and pre-applied Thermal Interface Material. Summary of Features Easy separation of DC and AC Optimized... | |
| Half-bridge 1200 V CoolSiC™ MOSFET Easy Module EasyDUAL™ 3B 1200 V / 1.44 mΩ halfbridge module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor and PressFIT Contact... | |
| HybridPACKTM DSC S1 700 V, 400 A half-bridge TRENCHSTOPTM IGBT3 including matching diodes with enhanced softness is a very compact IGBT molded module targeting hybrid and electric vehicles. | |
| PrimePACK™ 2 1200 V, 1600 A dual IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Summary of Features Highest power density Best-in-class VCEsat Tvjop=... | |
| PrimePACK™ 2 1700 V, 450 A half bridge dual IGBT module with TRENCHSTOP™ IGBT4, NTC and fast switching chip. Summary of Features Extended operation temperature Tvj op High DC... | |
| PrimePACK™ 3+ 1200 V, 2400 A dual IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC with pre-applied Thermal Interface Material. Summary of Features Highest power density Best-in-class... | |
| PrimePACK™ 3+ 1200 V, 2400 A dual IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features Highest power... | |
| PrimePACK™ 3+ 1700 V, 1700 A dual IGBT module with .XT interconnection technology, TRENCHSTOP™ IGBT5, Emitter Controlled 5 diode and NTC. Optimized for MSC of wind turbine converters. Summary of... | |
| PrimePACK™ 3+ 1700 V, 1800 A dual IGBT module with TRENCHSTOP™ IGBT5 and .XT interconnection technology, Emitter Controlled 5 diode and NTC and pre-applied Thermal Interface Material. Summary of Features... | |
| PrimePACK™ 3+ 1700 V, 2000 A dual IGBT module with .XT interconnection technology, TRENCHSTOP™ IGBT5, Emitter Controlled 5 diode and NTC. Optimized for LSC of wind turbine converters. Summary of... | |
| PrimePACK™ 3+ 2300 V, 1800 A dual IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC with pre-applied Thermal Interface Material. Summary of Features New voltage class of... | |
| PrimePACK™ 3+ 2300 V, 1800 A dual IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features New voltage... | |
| PrimePACK™2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and fast switching chip. Summary of Features Extended operation temperature Tvj op... | |
| PrimePACK™2 1700 V, 650 A half bridge dual IGBT module with TRENCHSTOP™ IGBT4, NTC and fast switching chip. Also available with pre-applied Thermal Interface Material. Summary of Features Extended operation... | |
| PrimePACK™2 1700 V, 650 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, NTC, fast switching chip and Thermal Interface Material. Summary of Features Extended operation temperature Tvj op High... | |
| PrimePACK™3+ 1200 V, 1800 A dual IGBT module with IGBT5 and .XT interconnection technology, Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTC. Also available with pre-applied Thermal Interface Material. Summary... | |
| PrimePACK™3+ 1200 V, 1800 A dual IGBT module with TRENCHSTOP™ IGBT5 and .XT soft switching interconnection technology, Emitter Controlled diode, NTC and pre-applied Thermal Interface Material. Summary of Features Extended... | |
| PrimePACK™3+ 1700 V, 1800 A dual IGBT module with TRENCHSTOP™ IGBT5 and .XT soft switching interconnection technology, Emitter Controlled 5 diode and NTC. Also available with pre-applied Thermal Interface Material. | |
| The HybridPACKTM DSC S2 is a very compact half-bridge module targeting Hybrid- and Electric Vehicle applications. The module is based on Infineon’s long-term experience developing IGBT power modules and implements... | |
| XHP™ 2 1700 V, 1800 A dual IGBT module with .XT interconnection technology and TRENCHSTOP™ IGBT5 for high reliability and robustness, combined with system availability and long lifetime for high... | |
| XHP™ 2 1700 V, 1800 A dual IGBT module with .XT interconnection technology, TRENCHSTOP™ IGBT5 and Thermal Interface Material for high reliability and robustness, combined with system availability and long... | |
| XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 1.9 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing... | |
| XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 2.5 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing... | |
| XHP™ 2 CoolSiC™ MOSFET halfbridge module 3.3 kV, 3.8 mΩ with .XT interconnection technology for decarbonizing transportation. Summary of Features CoolSiC™ MOSFET 3.3 kV Integrated body diode XHP™ 2 housing... | |
| XHP™ 3 3300 V, 450 A dual IGBT module with TRENCHSTOPTM IGBT3, emitter controlled diode and with enhanced isolation of 10.4 kV. Summary of Features High DC stability High... | |
| XHP™ 3 4500 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4, emitter controlled diode and with enhanced isolation of 10.4 kV. Summary of Features High DC stability High short-circuit... | |
| XHP™3 3300 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT3 and emitter controlled diode - Designed for flexibility and reliability! Summary of Features High DC stability High short-circuit capability... | |
| XHP™3 6500 V, 225 A dual IGBT module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode. Summary of Features Standardized XHP™ 3 housing 6.5 kV 10.4 kV isolation CTI 600... |
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