N-Channel 60V 36A (Ta), 306A (Tc) 214W (Tc) Surface Mount PG-TSON-8-3
N-Channel 60V 36A (Ta), 306A (Tc) 214W (Tc) Surface Mount PG-TSON-8-3
N-Channel 60V 36A (Ta), 306A (Tc) 214W (Tc) Surface Mount PG-TSON-8-3
MOSFET N-CH 60V 100A TSON-8 Product overview: BSC012N06NSATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC012N06NSATMA1
Manufacturer: Infineon Technologies
Win Source Part Number: 864623-BSC012N06NSAT
Series: OptiMOS™
Operating Temperature Range: -55°C ~ 175°C (TJ)
Features: N-Channel 60 V 36A (Ta), 306A (Tc) 214W (Tc) Surface Mount PG-TSON-8-3
Package: 8-PowerTDFN
Package: Reel - TR
Mounting: Surface Mount
Family Name: BSC012
Categories: Discrete Semiconductor Products
Case / Package: PG-TSON-8-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Quantity per package: 5000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: BSC012N06NSATMA1DKR,
MOSFET N-CH 60V 100A TSON-8
MOSFET N-CH 60V 100A TSON-8
MOSFET, N-CH, 60V, 100A, 175DEG C, 214W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC012N06NSATMA1CT-ND | 278-BSC012N06NSATMA1 | 864623-BSC012N06NSATMA1 | 2580679P | BSC012N06NSATMA1 | BSC012N06NSATMA1 | BSC012N06NSATMA1 | 42AH1615 |
| Product Name | Single FETs, MOSFETs | 60V 100A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC012N06NSATMA1 | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 100A, 175Deg C, 214W; Channel Type Infineon |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | 8-PowerTDFN | Tape & Reel (TR) | SOT3; PG-TSON-8-3 | TSON | 8-PowerTDFN | 11000 pF @ 30 V | TO-3 | |
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| Transconductance | 0.0850 kS |
