Infineon Technologies AG MOSFET BSC059N04LS G

Description
MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3
Description
MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3
Datasheet
Datasheet Summary
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BSC059N04LS G is an N-channel MOSFET for DC/DC converters and SMPS, housed in a PG-TDSON-8 package. It has a drain-source breakdown voltage of 40 V, a continuous drain current of 73 A at 25 °C, and a maximum on-resistance of 5.9 mΩ at 10 V gate drive. The device features a thermal resistance from junction to case of 2.5 K/W, is 100% avalanche tested with a single-pulse avalanche energy of 25 mJ, and is RoHS compliant and halogen-free. It meets JEDEC J-STD-20 and JESD-22 qualification standards.

Datasheet Summary
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BSC059N04LS G is an N-channel MOSFET for DC/DC converters and SMPS, housed in a PG-TDSON-8 package. It has a drain-source breakdown voltage of 40 V, a continuous drain current of 73 A at 25 °C, and a maximum on-resistance of 5.9 mΩ at 10 V gate drive. The device features a thermal resistance from junction to case of 2.5 K/W, is 100% avalanche tested with a single-pulse avalanche energy of 25 mJ, and is RoHS compliant and halogen-free. It meets JEDEC J-STD-20 and JESD-22 qualification standards.

Suppliers

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Sheung Wan, Hong Kong
MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3

MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC059N04LS G
Product Name MOSFET
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