Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC035N04LS BSC035N04LS

Description
Manufacturer: Infineon Technologies Win Source Part Number: 82877-BSC035N04LS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 21A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2V @ 36μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 5100pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 50A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 82877-BSC035N04LS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 21A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2V @ 36μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 5100pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 50A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC035N04LS - 82877-BSC035N04LS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC035N04LS
82877-BSC035N04LS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC035N04LS 82877-BSC035N04LS
Manufacturer: Infineon Technologies Win Source Part Number: 82877-BSC035N04LS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 21A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2V @ 36μA Max Gate Charge: 64nC @ 10V Max Input Capacitance: 5100pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.5 mOhm @ 50A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 82877-BSC035N04LS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 21A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 36μA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 5100pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 50A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 82877-BSC035N04LS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC035N04LS
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 2500 to 69000 milliwatts
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