New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology.
Summary of Features
Optimized for synchronous rectification
15% lower R DS(on) than alternative devices
31% improvement of FOM over similar devices
Integrated Schottky-like diode
RoHS compliant - halogen free
MSL1 rated
Benefits
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
Potential Applications
Synchronous rectification
Solar micro inverter
Isolated DC-DC converters
Motor control
Or-ing switches
Applications
48 V intermediate bus converter (IBC)
Domain controller for ADAS and autonomous driving
Mobile devices and smartphones
Telecommunication infrastructure
Uninterruptible power supplies (UPS)
Designers who used this product also designed with
6ED2742S01Q | Gate driver ICs
IRS10752L | Gate driver ICs
IRS4427S | Gate driver ICs
1ED44173N01B | Gate driver ICs
BSC037N08NS5 | N-Channel Power MOSFET
BSZ900N20NS3 G | N-Channel Power MOSFET
BSC093N15NS5 | N-Channel Power MOSFET
BSC035N10NS5 | N-Channel Power MOSFET
IR38063M | Integrated POL Voltage Regulators
BSZ068N06NS | N-Channel Power MOSFET
BSS123N | Small signal/small power MOSFET
1EDI60N12AF | Gate driver ICs
BSS131 | Small signal/small power MOSFET
IRS21864S | Gate driver ICs
ICE5QR1680BG | CoolSET™ Quasi Resonant
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
S25FL256LAGBHV023 | Quad SPI Flash
BSP125 | Small signal/small power MOSFET
2ED2110S06M | Gate driver ICs
6ED2742S01Q | Gate driver ICs
IRS10752L | Gate driver ICs
IRS4427S | Gate driver ICs
1ED44173N01B | Gate driver ICs
BSC037N08NS5 | N-Channel Power MOSFET
BSZ900N20NS3 G | N-Channel Power MOSFET
BSC093N15NS5 | N-Channel Power MOSFET
BSC035N10NS5 | N-Channel Power MOSFET
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New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology.
Summary of Features
- Optimized for synchronous rectification
- 15% lower R DS(on) than alternative devices
- 31% improvement of FOM over similar devices
- Integrated Schottky-like diode
- RoHS compliant - halogen free
- MSL1 rated
Benefits
- Highest system efficiency
- Less paralleling required
- Increased power density
- System cost reduction
- Very low voltage overshoot
Potential Applications
- Synchronous rectification
- Solar micro inverter
- Isolated DC-DC converters
- Motor control
- Or-ing switches
Applications
- 48 V intermediate bus converter (IBC)
- Domain controller for ADAS and autonomous driving
- Mobile devices and smartphones
- Telecommunication infrastructure
- Uninterruptible power supplies (UPS)
Designers who used this product also designed with
- 6ED2742S01Q |
Gate driver ICs
- IRS10752L |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- 1ED44173N01B |
Gate driver ICs
- BSC037N08NS5 |
N-Channel Power MOSFET
- BSZ900N20NS3 G |
N-Channel Power MOSFET
- BSC093N15NS5 |
N-Channel Power MOSFET
- BSC035N10NS5 |
N-Channel Power MOSFET
- IR38063M |
Integrated POL Voltage Regulators
- BSZ068N06NS |
N-Channel Power MOSFET
- BSS123N |
Small signal/small power MOSFET
- 1EDI60N12AF |
Gate driver ICs
- BSS131 |
Small signal/small power MOSFET
- IRS21864S |
Gate driver ICs
- ICE5QR1680BG |
CoolSET™ Quasi Resonant
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- S25FL256LAGBHV023 |
Quad SPI Flash
- BSP125 |
Small signal/small power MOSFET
- 2ED2110S06M |
Gate driver ICs
- 6ED2742S01Q |
Gate driver ICs
- IRS10752L |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- 1ED44173N01B |
Gate driver ICs
- BSC037N08NS5 |
N-Channel Power MOSFET
- BSZ900N20NS3 G |
N-Channel Power MOSFET
- BSC093N15NS5 |
N-Channel Power MOSFET
- BSC035N10NS5 |
N-Channel Power MOSFET
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