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Infineon Technologies AG N-Channel Power MOSFET BSC050N10NS5

Description
OptiMOS™ 5 100V power MOSFETs are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest RDS(on). Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications 48 V power distribution High-voltage DC-DC converter for electric vehicles Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IRS4427S | Gate Driver ICs BSC040N10NS5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers BSC052N08NS5 | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs IRS21271S | Gate Driver ICs 1EDN7512B | Gate Driver ICs 2ED2110S06M | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS4427S | Gate Driver ICs BSC040N10NS5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers BSC052N08NS5 | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs 1 2 3 4
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Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC050N10NS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC050N10NS5
N-Channel Power MOSFET BSC050N10NS5
OptiMOS™ 5 100V power MOSFETs are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest RDS(on). Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications 48 V power distribution High-voltage DC-DC converter for electric vehicles Telecommunication infrastructure Uninterruptible power supplies (UPS) Designers who used this product also designed with IRS4427S | Gate Driver ICs BSC040N10NS5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers BSC052N08NS5 | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs IRS21271S | Gate Driver ICs 1EDN7512B | Gate Driver ICs 2ED2110S06M | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS4427S | Gate Driver ICs BSC040N10NS5 | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers BSC052N08NS5 | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs 1 2 3 4

OptiMOS™ 5 100V power MOSFETs are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS™ 5 100V MOSFETs offer the industry’s lowest RDS(on).


Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44%
  • RDS(on) reduction of up to 43% from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Light electric vehicles
  • Adapter

Applications

  • 48 V power distribution
  • High-voltage DC-DC converter for electric vehicles
  • Telecommunication infrastructure
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IRS4427S |
    Gate Driver ICs
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • XDPP1100-Q024 |
    Digital Power Controllers
  • BSC052N08NS5 |
    N-Channel Power MOSFET
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 2EDL8033G4B |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • 1EDN7512B |
    Gate Driver ICs
  • 2ED2110S06M |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • XDPP1100-Q024 |
    Digital Power Controllers
  • BSC052N08NS5 |
    N-Channel Power MOSFET
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 2EDL8033G4B |
    Gate Driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC050N10NS5
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0050 ohms
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