Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC047N08NS3G BSC047N08NS3G

Manufacturer: Infineon Technologies
Win Source Part Number: 089950-BSC047N08NS3G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Family Name: BSC047N08NS3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 18A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 90μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 4800pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): STL100N8F7; STL75N8LF6; CSD19502Q5BT;
Introduction Date: January 01, 2000
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP T/R Product overview: BSC047N08NS3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC047N08NS3G can be used for catalog matching and distributor lookup.

MOSFET N-Channel 80V 18A TDSON8 EP

MOSFET N-Channel 80V 18A TDSON8 EP

MOSFET N-Channel 80V 18A TDSON8 EP