Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC047N08NS3G BSC047N08NS3G

Description
Manufacturer: Infineon Technologies Win Source Part Number: 089950-BSC047N08NS3G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Family Name: BSC047N08NS3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 18A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 3.5V @ 90μA Max Gate Charge: 69nC @ 10V Max Input Capacitance: 4800pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): STL100N8F7; STL75N8LF6; CSD19502Q5BT; Introduction Date: January 01, 2000 ECCN: EAR99 Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 089950-BSC047N08NS3G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Family Name: BSC047N08NS3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 18A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 3.5V @ 90μA Max Gate Charge: 69nC @ 10V Max Input Capacitance: 4800pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): STL100N8F7; STL75N8LF6; CSD19502Q5BT; Introduction Date: January 01, 2000 ECCN: EAR99 Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC047N08NS3G - 089950-BSC047N08NS3G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC047N08NS3G
089950-BSC047N08NS3G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC047N08NS3G 089950-BSC047N08NS3G
Manufacturer: Infineon Technologies Win Source Part Number: 089950-BSC047N08NS3G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Family Name: BSC047N08NS3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 18A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 3.5V @ 90μA Max Gate Charge: 69nC @ 10V Max Input Capacitance: 4800pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.7 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): STL100N8F7; STL75N8LF6; CSD19502Q5BT; Introduction Date: January 01, 2000 ECCN: EAR99 Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 089950-BSC047N08NS3G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Family Name: BSC047N08NS3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 18A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 90μA
Max Gate Charge: 69nC @ 10V
Max Input Capacitance: 4800pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.7 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): STL100N8F7; STL75N8LF6; CSD19502Q5BT;
Introduction Date: January 01, 2000
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
80V 18A MOSFET Transistor
278-BSC047N08NS3G
80V 18A MOSFET Transistor 278-BSC047N08NS3G
Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP T/R Product overview: BSC047N08NS3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC047N08NS3G can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP T/R Product overview: BSC047N08NS3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 18A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC047N08NS3G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 9064347 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9064347
MOSFETs 9064347
MOSFET N-Channel 80V 18A TDSON8 EP

MOSFET N-Channel 80V 18A TDSON8 EP

Supplier's Site
MOSFETs - 9064347P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9064347P
MOSFETs 9064347P
MOSFET N-Channel 80V 18A TDSON8 EP

MOSFET N-Channel 80V 18A TDSON8 EP

Supplier's Site
MOSFETs - 1787494 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1787494
MOSFETs 1787494
MOSFET N-Channel 80V 18A TDSON8 EP

MOSFET N-Channel 80V 18A TDSON8 EP

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 089950-BSC047N08NS3G 278-BSC047N08NS3G 9064347 9064347P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC047N08NS3G 80V 18A MOSFET Transistor MOSFETs MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 80 volts 80 volts
PD 2500 to 125000 milliwatts 2500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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