The Infineon BSC0504NSI is an N-channel MOSFET designed for high-performance applications, particularly optimized for buck converters. It features a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) rating of 72A. The device has a low on-resistance (RDS(on)) of 3.7 mOc at a gate-source voltage (VGS) of 4.5V, which contributes to its efficiency in power management. The MOSFET is 100% avalanche tested and is compliant with RoHS and halogen-free standards. It comes in a PG-TDSON-8 package, making it suitable for compact designs. This product is qualified according to JEDEC standards for target applications, ensuring reliability in various environments.
MOSFET N-CH 30V 21A/72A TDSON Product overview: BSC0504NSIATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 21A, 72A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 21A, 72A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC0504NSIATMA1 can be used for catalog matching and distributor lookup.
N-Channel 30V 21A (Ta), 72A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-6
N-Channel 30V 21A (Ta), 72A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-6
N-Channel 30V 21A (Ta), 72A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-6
Manufacturer: Infineon Technologies
Win Source Part Number: 770409-BSC0504NSIATM
Series: OptiMOS
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Family Name: BSC0504NSI
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: PG-TDSON-8
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 960pF @ 15V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.5W (Ta), 30W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.7 mOhm @ 30A, 10V
Introduction Date: January 01, 2000
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 21A/72A TDSON
MOSFET, N-CH, 30V, 72A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.004ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:2V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 30V 21A/72A TDSON
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSC0504NSIATMA1 | BSC0504NSIATMA1DKR-ND | 770409-BSC0504NSIATMA1 | BSC0504NSIATMA1 | 43AC2203 | BSC0504NSIATMA1 | BSC0504NSIATMA1 |
| Product Name | 30V 21A 72A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0504NSIATMA1 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 72A, Tdson-8; Transistor Polarity Infineon | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| Transconductance | 0.0500 kS | ||||||
| PD | 30 milliwatts | 2500 to 30000 milliwatts | 2500 milliwatts |
