Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC007N04LS6SC BSC007N04LS6SC

Description
OptiMOS™ 6 power MOSFETs 40 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 6 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus, either the PCB runs cooler at the same power dissipation for improved reliability, or more power can be handled by the MOSFET for higher power density. Summary of Features High performance silicon technology Low top-side RthJC (0.72 K/W) Package rated to TJmax=175ºC Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products Benefits Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change Potential Applications Power and gardening tools Service robots and automated guided vehicles (AGVs) Telecom power supplies Server power supplies Applications 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment High-voltage DC-DC converter for electric vehicles Designers who used this product also designed with BSC160N15NS5 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IPT65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMZA65R048M1H | Silicon Carbide MOSFET Discretes 2EDS8265H | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R035CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R019C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC160N15NS5 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IPT65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMZA65R048M1H | Silicon Carbide MOSFET Discretes 2EDS8265H | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R035CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R019C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3
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Description
OptiMOS™ 6 power MOSFETs 40 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 6 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus, either the PCB runs cooler at the same power dissipation for improved reliability, or more power can be handled by the MOSFET for higher power density. Summary of Features High performance silicon technology Low top-side RthJC (0.72 K/W) Package rated to TJmax=175ºC Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products Benefits Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change Potential Applications Power and gardening tools Service robots and automated guided vehicles (AGVs) Telecom power supplies Server power supplies Applications 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment High-voltage DC-DC converter for electric vehicles Designers who used this product also designed with BSC160N15NS5 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IPT65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMZA65R048M1H | Silicon Carbide MOSFET Discretes 2EDS8265H | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R035CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R019C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC160N15NS5 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IPT65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMZA65R048M1H | Silicon Carbide MOSFET Discretes 2EDS8265H | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R035CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R019C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3
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Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC007N04LS6SC - BSC007N04LS6SC - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC007N04LS6SC
BSC007N04LS6SC
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC007N04LS6SC BSC007N04LS6SC
OptiMOS™ 6 power MOSFETs 40 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 6 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus, either the PCB runs cooler at the same power dissipation for improved reliability, or more power can be handled by the MOSFET for higher power density. Summary of Features High performance silicon technology Low top-side RthJC (0.72 K/W) Package rated to TJmax=175ºC Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products Benefits Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change Potential Applications Power and gardening tools Service robots and automated guided vehicles (AGVs) Telecom power supplies Server power supplies Applications 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment High-voltage DC-DC converter for electric vehicles Designers who used this product also designed with BSC160N15NS5 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IPT65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMZA65R048M1H | Silicon Carbide MOSFET Discretes 2EDS8265H | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R035CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R019C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant BSC160N15NS5 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IPT65R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMZA65R048M1H | Silicon Carbide MOSFET Discretes 2EDS8265H | Gate driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R035CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R019C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3

OptiMOS™ 6 power MOSFETs 40 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

OptiMOS™ 6 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint.

SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink).

About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus,

  • either the PCB runs cooler at the same power dissipation for improved reliability,
  • or more power can be handled by the MOSFET for higher power density.

Summary of Features

  • High performance silicon technology
  • Low top-side RthJC (0.72 K/W)
  • Package rated to TJmax=175ºC
  • Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products

Benefits

  • Lower conduction losses and switching losses for higher system efficiency
  • Improved heat dissipation for high power density and improved reliability
  • Superior power handling capability and ruggedness for longer lifetime
  • Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change

Potential Applications

  • Power and gardening tools
  • Service robots and automated guided vehicles (AGVs)
  • Telecom power supplies
  • Server power supplies

Applications

  • 48 V intermediate bus converter (IBC)
  • Cordless power tools and outdoor power equipment
  • High-voltage DC-DC converter for electric vehicles

Designers who used this product also designed with


  • BSC160N15NS5 |
    N-Channel Power MOSFET
  • SN7002W |
    Small signal/small power MOSFET
  • IPT65R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMZA65R048M1H |
    Silicon Carbide MOSFET Discretes
  • 2EDS8265H |
    Gate driver ICs
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R035CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW65R019C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2N7002 |
    N-Channel Power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • BSC160N15NS5 |
    N-Channel Power MOSFET
  • SN7002W |
    Small signal/small power MOSFET
  • IPT65R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMZA65R048M1H |
    Silicon Carbide MOSFET Discretes
  • 2EDS8265H |
    Gate driver ICs
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R035CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW65R019C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC007N04LS6SC
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC007N04LS6SC
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 7.00E-4 ohms
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