MOSFET N-CH 30V 23A/100A TDSON Product overview: BSC032N03SG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 23A, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 23A, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC032N03SG can be used for catalog matching and distributor lookup.
N-Channel 30V 23A (Ta), 100A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount PG-TDSON-8-1
Manufacturer: Infineon Technologies
Win Source Part Number: 099487-BSC032N03SG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 23A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2V @ 70μA
Max Gate Charge: 39nC @ 5V
Max Input Capacitance: 5080pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 30V 23A/100A TDSON
MOSFET N-CH 30V 23A/100A TDSON
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-BSC032N03SG | BSC032N03SGINTR-ND | 099487-BSC032N03SG | BSC032N03SG | BSC032N03SG |
| Product Name | 30V 23A 100A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC032N03SG | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| PD | 2800 milliwatts | 2800 to 78000 milliwatts | 2800 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | Tape & Reel (TR) | 8-PowerTDFN | SOT3; PG-TDSON-8 | 8-PowerTDFN | 8-PowerTDFN |
| Packing Method | Tape & Reel (TR) | Tape Reel; Reel - TR | Tape Reel; Tape & Reel (TR),Cut Tape (CT) |
